Mechanical Spectroscopy and Internal Friction in SiO2/Si

The method was developed, the installation was designed and manufactured for excitation and registration of damped bending resonant oscillations in SiO₂/Si disc-shaped wafer-plates with thickness h_S = 300 ÷ 500∙10³ nm and diameter D = 60 ÷ 100∙10 ^– 3 m with the aim to measure structurally sensitive internal friction (IF) Q ^– 1. The technique for non-destructive testing of the integral density of structural defects nd and the depth of the broken layer hbl in disk-shaped semiconductor substrates was developed. The measurement of IF background Q ^– 1₀ at harmonic frequencies f₀, f₂ allowed to experimentally determine the nodal lines of oscillating disks. This allowed to make corrections to theoretical calculations of finding these nodal lines, taking into account the linear dimensions of the disks and the method of their attachment. Temperature IF spectrum Q ^– 1(Т) in SiO₂/Si disk-like wafer-plates after their X-ray and electron irradiation was studied. It was found that annealing of Si structural defects changes the shape of the temperature IF spectrum Q ^– 1(Т) in the measurements process. IF peaks Q ^– 1_M, which is formed by point defects, could be observed under the condition that a SiO2/Si wafer-plate was heated with velocity V = ΔT/Δt ≤ 0.1 K/с. This made it possible to determine the activation energy H of the reorientation of radiation defects anisotropic complexes. The establishment of the stability of IF background parameters Q ^– 1₀ made it possible to determine the radiation resistance of semiconductor wafer-plates and devices based on them. The proposed methodology can be used as a non-destructive method to control the crystal structure defects of semiconductor wafer-plates used for microelectronics.