Mechanical Spectroscopy and Internal Friction in SiO2/Si

Authors A.P. Onanko1 , V.V. Kuryliuk1 , Y.A. Onanko2 , A.M. Kuryliuk1 , D.V. Charnyi2 , O.P. Dmytrenko1 , M.P. Kulish1 , T.M. Pinchuk-Rugal1 , A.A. Kuzmych3

1Taras Shevchenko National University of Kyiv, 64/13, Volodymyrska St., 01601 Kyiv, Ukraine

2Institute of Water Problems and Land Reclamation, 37, Vasylkivska St., 03022 Kyiv, Ukraine

3National University of Water and Environmental Engineering, 11, Soborna St., 33000 Rivne, Ukraine

Issue Volume 14, Year 2022, Number 6
Dates Received 22 August 2022; revised manuscript received 23 December 2022; published online 27 December 2022
Citation A.P. Onanko, V.V. Kuryliuk, Y.A. Onanko, et al., J. Nano- Electron. Phys. 14 No 6, 06029 (2022)
PACS Number(s) 82.33.Ln, 82.70.Gg, 83.80.Kn
Keywords Mechanical spectroscopy, Relaxation mechanism, Substrate (12) , Migration of atoms, Internal friction.

The method was developed, the installation was designed and manufactured for excitation and registration of damped bending resonant oscillations in SiO2/Si disc-shaped wafer-plates with thickness hS = 300 ÷ 500∙103 nm and diameter D = 60 ÷ 100∙10 – 3 m with the aim to measure structurally sensitive internal friction (IF) Q – 1. The technique for non-destructive testing of the integral density of structural defects nd and the depth of the broken layer hbl in disk-shaped semiconductor substrates was developed. The measurement of IF background Q – 10 at harmonic frequencies f0, f2 allowed to experimentally determine the nodal lines of oscillating disks. This allowed to make corrections to theoretical calculations of finding these nodal lines, taking into account the linear dimensions of the disks and the method of their attachment. Temperature IF spectrum Q – 1(Т) in SiO2/Si disk-like wafer-plates after their X-ray and electron irradiation was studied. It was found that annealing of Si structural defects changes the shape of the temperature IF spectrum Q – 1(Т) in the measurements process. IF peaks Q – 1M, which is formed by point defects, could be observed under the condition that a SiO2/Si wafer-plate was heated with velocity V = ΔT/Δt ≤ 0.1 K/с. This made it possible to determine the activation energy H of the reorientation of radiation defects anisotropic complexes. The establishment of the stability of IF background parameters Q – 10 made it possible to determine the radiation resistance of semiconductor wafer-plates and devices based on them. The proposed methodology can be used as a non-destructive method to control the crystal structure defects of semiconductor wafer-plates used for microelectronics.

List of References