Mechanisms of Current Generation in Graphene/p-CdTe Schottky Diodes
| Authors | I.P. Koziarskyi1, M.I. Ilashchuk1, I.G. Orletskyi1, L.A. Myroniuk1,2, D.V. Myroniuk1,2, E.V. Maistruk1 , D.P. Koziarskyi1, V.V. Strelchuk3 |
| Affiliations |
1Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubynskyi St., 58002 Chernivtsi, Ukraine 2I.M. Frantsevich Institute for Problems of Materials Science, NASU, 3, Krhyzhanovsky St., 03142 Kyiv, Ukraine 3V. Lashkaryov Institute of Semiconductor Physics, NASU, 45, Nauky Ave, 03028 Kyiv, Ukraine |
| Е-mail | i.koziarskyi@chnu.edu.ua |
| Issue | Volume 14, Year 2022, Number 6 |
| Dates | Received 03 October 2022; revised manuscript received 20 December 2022; published online 27 December 2022 |
| Citation | I.P. Koziarskyi, M.I. Ilashchuk, I.G. Orletskyi, et al., J. Nano- Electron. Phys. 14 No 6, 06001 (2022) |
| DOI | https://doi.org/10.21272/jnep.14(6).06001 |
| PACS Number(s) | 73.61.Le, 81.15.Lm |
| Keywords | Graphene (23) , Schottky Diode (10) , CdTe (15) , Mechanisms of current generation. |
| Annotation |
Graphene/p-CdTe Schottky diodes are obtained on p-CdTe substrates by spaying aqueous solutions of polyvinylpyrrolidone (PVP, (C6H9NO)n), which contain particles of multilayer graphene mechanically exfoliated from graphite. The diode properties of the obtained graphene/p-CdTe surface barrier structures are determined by the energy barrier qφk = 0.8 eV, which is formed in the near-contact region of p-CdTe. The temperature dependence of the I-V-characteristics is analyzed and the dynamics of change in the barrier height with temperature and the main mechanisms of current generation in the studied diodes under forward and reverse voltages are established. In the region of forward biases at V < 0.2 V and reverse biases at – 0.5 V < V, recombination-generation currents flow through the diode. The reverse current is due to the generation processes, and the forward current is due to recombination in p-CdTe charge carrier depleted region. At higher, both forward and reverse voltages, current formation is dominated by the tunneling of charge carriers through the potential barrier of the electrical junction. |
|
List of References |
Other articles from this number
1) MWCNT Thin Films by CVD Method and Some Applications [06002-1-06002-4]2) Rheological Analysis of TiO2 Based Nano Drilling Fluid [06003-1-06003-5]
3) Design and Conception of Platform that Allows to Connect Different Solar Panels and Loads through a DC-DC Buck Converter [06004-1-06004-6]
4) Deposition Rate and Electrochemical Corrosion Behavior of Nickel-Based Composite Coatings [06005-1-06005-5]
5) Consistent Rheological Behavior of Formate Based Fluid for Drilling and Workover Operations [06006-1-06006-4]
6) Lead-Free Piezoelectric Materials for Medical Diligence [06007-1-06007-4]
7) Effect of Heat Sink on Mechanical, Metallurgical and Microstructural Characteristics of Friction Stir Spot Welded Dissimilar Al6061 and Al5052 Joints [06008-1-06008-5]
8) Effects of Nanoparticles in Polymer-Based Enhanced Oil Recovery Technique [06009-1-06009-4]
9) Squeezing MHD Flow along with Heat Transfer between Parallel plates by Using the Differential Transform Method [06010-1-06010-5]
10) Calibration of a Microscopic Measurement System by Projection Technique of Coded Periodic Patterns [06011-1-06011-5]
11) Features of Impurity Segregation and Microstructure of Si Ingots obtained by Electron-Beam Purification of Metallurgical Grade Silicon [06012-1-06012-5]
12) Compact and Miniaturized Dual Band Tag Antenna Based on Metamaterial for IoT, RFID Technology, and Hospital Services Applications [06013-1-06013-6]
13) Implementation of a Linearly Graded Binary Metal Gate Work Function VTFET with Air Pocket [06014-1-06014-6]
14) Parametric Analysis by Simulation of Bragg Gratings and Their Application as a Sensor [06015-1-06015-5]
15) Numerical Modeling of Thin-Film Growth by Random Deposition with Particle Evaporation [06016-1-06016-6]
16) Structural and Optical Properties of Copper Indium Oxide Nanocrystalline Powders Prepared by Solid-State Reaction Method [06017-1-06017-5]
17) New Design Approach for the Dual-Band Bandpass Microwave Filter (DBBPF) Inspired by Square Symmetrical Metamaterial Resonators (SSRRs) for X- and Ku-Band Applications [06018-1-06018-5]
18) Photoluminescence and Thermoluminescence Studies of Dysprosium (Dy3+) Doped Zinc Aluminate Nanophosphor (Zn0.97Al2O4:0.03Dy) [06019-1-06019-6]
19) Relaxation of the Electronic Excitation of the Molecule in the Path Spiropyran ↔ Merocyanine [06020-1-06020-7]
20) Enhanced 4-Port MIMO Antenna Based on Electromagnetic Mutual Coupling Reduction Using CSRRs Metamaterials for Sub-6 GHz 5G Applications [06021-1-06021-5]
21) Study of the Optimal Composition of the Bath on Nucleation and Growth of Ni-Fe Alloy Thin Films [06022-1-06022-5]
22) Film Thickness Effect on Properties of Co-ZnO Thin Films Prepared by Sol-Gel Method [06023-1-06023-6]
23) Abrasion, Wear, and Viscosity Analysis of Nano Fe3O4 Based Pongamia Bio-Oil [06024-1-06024-4]
24) Point-Contact Spectroscopy of Mo/Si Superlattices [06025-1-06025-6]
25) Sensor Methods for the Detection of Polycyclic Aromatic Hydrocarbons (PAHs) in Industrial Wastewater [06026-1-06026-5]
26) Recent Advancements in Electrochemical Conversion of Carbon Dioxide [06027-1-06027-5]
27) Behavior of CAD 110 Copper (Heat Sink Material) as a Fractal Structured RFID Antenna in High Temperature Operation [06028-1-06028-5]
28) Mechanical Spectroscopy and Internal Friction in SiO2/Si [06029-1-06029-7]
29) The Influence of Nanosized Active Particles of the Melt and the Electrode Surface on Charge Transfer Processes at the Electrode/Melt Interface [06030-1-06030-3]
30) Concentration Dependence of Thermodynamic and Dynamic Parameters of High-Entropy Alloys [06031-1-06031-4]
31) Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using Lambert W Function [06032-1-06032-4]
32) Simulation Study of CZTS/CZTSe Tandem Solar Cell by Using SCAPS-1D Software [06033-1-06033-10]
33) About One Improvement of Approximating Functions Method for the Problems with Nonlinear Media [06034-1-06034-6]
