Mechanisms of Current Generation in Graphene/p-CdTe Schottky Diodes

Authors I.P. Koziarskyi1, M.I. Ilashchuk1, I.G. Orletskyi1, L.A. Myroniuk1,2, D.V. Myroniuk1,2, E.V. Maistruk1 , D.P. Koziarskyi1, V.V. Strelchuk3

1Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubynskyi St., 58002 Chernivtsi, Ukraine

2I.M. Frantsevich Institute for Problems of Materials Science, NASU, 3, Krhyzhanovsky St., 03142 Kyiv, Ukraine

3V. Lashkaryov Institute of Semiconductor Physics, NASU, 45, Nauky Ave, 03028 Kyiv, Ukraine

Issue Volume 14, Year 2022, Number 6
Dates Received 03 October 2022; revised manuscript received 20 December 2022; published online 27 December 2022
Citation I.P. Koziarskyi, M.I. Ilashchuk, I.G. Orletskyi, et al., J. Nano- Electron. Phys. 14 No 6, 06001 (2022)
PACS Number(s) 73.61.Le, 81.15.Lm
Keywords Graphene (23) , Schottky Diode (10) , CdTe (15) , Mechanisms of current generation.

Graphene/p-CdTe Schottky diodes are obtained on p-CdTe substrates by spaying aqueous solutions of polyvinylpyrrolidone (PVP, (C6H9NO)n), which contain particles of multilayer graphene mechanically exfoliated from graphite. The diode properties of the obtained graphene/p-CdTe surface barrier structures are determined by the energy barrier qφk = 0.8 eV, which is formed in the near-contact region of p-CdTe. The temperature dependence of the I-V-characteristics is analyzed and the dynamics of change in the barrier height with temperature and the main mechanisms of current generation in the studied diodes under forward and reverse voltages are established. In the region of forward biases at V < 0.2 V and reverse biases at – 0.5 V < V, recombination-generation currents flow through the diode. The reverse current is due to the generation processes, and the forward current is due to recombination in p-CdTe charge carrier depleted region. At higher, both forward and reverse voltages, current formation is dominated by the tunneling of charge carriers through the potential barrier of the electrical junction.

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