Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using Lambert W Function

Authors Abdelaziz Rabehi1, 2 , Abdelhalim Rabehi2, Abdelmalek Douara3, Hicham Helal4, Oussama Baitiche5, Boudali Akkal1, Mohammed Amrani1, Schahrazade Tizi1, Zineb Benamara1

1Laboratoire de Micro-Electronique Appliquée, Université Djillali Liabès de Sidi Bel Abbés, BP 89, 22000, Sidi Bel Abbés, Algeria

2Applied Automation and Industrial Diagnostics Laboratory, University of Ziane Achor, 17000 Djelfa, Algeria

3Faculty of Science and Technology, Tissemsilt University, Algeria

4Sensor Laboratory University of Brescia, Via D. Valotti 9, 25133 Brescia, Italy

5Laboratory of Semi-Conductors and Functional Materials, Ammar Thlidji University of Laghouat, Algeria


Issue Volume 14, Year 2022, Number 6
Dates Received 27 October 2022; revised manuscript received 19 December 2022; published online 27 December 2022
Citation Abdelaziz Rabehi, Abdelhalim Rabehi, et al., J. Nano- Electron. Phys. 14 No 6, 06032 (2022)
PACS Number(s) 85.30.Hi, 85.30.Kk
Keywords SiC (28) , Schottky diodes (2) , Lambert function, Inhomogeneous barrier height, Electrical measurement.

Electrical study of Ni and Ti metals of Schottky contacts on n-6H-SiC epitaxial layers is performed, by current-voltage (I-V) characterization. Ni/6H-SiC shows inhomogeneous barrier height behavior. Thermionic emission model is coupled with the Lambert function to obtain an explicit form of the Schottky equation as well as to specify the number of branches necessary for modeling the abnormal behavior. The inhomogeneous barrier height for the investigated Ni/6H-SiC junction can be reproduced by a model that includes two Schottky branches, which give a low (L) and a high (H) Schottky barriers (φLbn = 0.92 eV, φHbn = 1.56 eV), as well as give a low and a high ideality factors (nL = 1.93, nH = 1.23).

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