Features of Inelastic and Elastic Characteristics of Si and SiO2/Si Structures

Authors A.P. Onanko1, V.V. Kuryliuk1 , Y.A. Onanko2, A.M. Kuryliuk1 , D.V. Charnyi2, O.P. Dmytrenko1, M.P. Kulish1, T.M. Pinchuk-Rugal1
Affiliations

1Taras Shevchenko National University of Kyiv, 64/13, Volodymyrska St., 01601 Kyiv, Ukraine

2Institute of Water Problems and Land Reclamation, 37, Vasylkivska St., 03022 Kyiv, Ukraine

Е-mail
Issue Volume 13, Year 2021, Number 5
Dates Received 11 August 2021; revised manuscript received 20 October 2021; published online 25 October 2021
Citation A.P. Onanko, V.V. Kuryliuk, Y.A. Onanko, et al., J. Nano- Electron. Phys. 13 No 5, 05017 (2021)
DOI https://doi.org/10.21272/jnep.13(5).05017
PACS Number(s) 82.33.Ln, 82.70.Gg, 83.80.Kn
Keywords Internal friction, Structural defects (2) , Ultrasonic (6) , Microstructure (21) .
Annotation

Measurement of temperature dependences of internal friction (IF) was performed on identical Si p-type substrates, orientation (100), doped with boron B, with specific resistivity ρ ≈ 7.5 Ohm×cm and thickness h ≈ 4.7·105 nm. The samples passed the same technological route after deposition of a SiO2 layer with thickness h ≈ 600 nm because of high-temperature oxidation in dry O2 at T0 ≈ 1300 K. It was found that the annealing of structural defects in Si changes the shape of the IF temperature spectrum Q – 1(T). The IF peaks QM – 1 formed by point defects could be observed under the condition that Si was heated at a rate V = ΔT/Δt ≤ 0.1 K/s. After X-ray irradiation with a dose γ ≈ 104 R, the IF maximum at TM1 ≈ 320 K increases sharply; its height Q – 1M1 increases almost threefold with a twofold decrease in the width ΔQ – 1M1, which testifies to the process of relaxation of radiation defects of the same type. The activation energy value H1 ≈ 0.63 eV was obtained for the IF peak QM – 1 in the Si plate at TM1 ≈ 320 K. The proximity of the obtained activation energy H1 at TM1 ≈ 320 K to the migration energy H0 ≈ 0.85 eV for positively charged interstitial atoms Sii+ suggests a relaxation mechanism due to the reorientation of interstitial atoms Sii. Upon electron irradiation, as a result of the collision of electrons with Si atoms, Frenkel defects are formed. Calculations show that the electron energy W ≈ 1 MeV, which corresponds to the experiment, is sufficient to shift Si atoms from their equilibrium positions. After irradiation with a dose γ ≈ 105 R, the IF Q – 1M1 maximum height at TM1 ≈ 320 K did not change significantly in comparison with the IF Q – 1(T) spectrum before irradiation that indicates a special effect of the dose γ ≈ 105 R.

List of References