Sol-Gel Fabricated CuO Thin Film: Characterization for Device Application
| Authors | A. Maini, M.A. Shah |
| Affiliations |
Special Laboratory for Multifunctional Nanomaterials (SLMN), P.G Department of Physics, National Institute of Technology Srinagar, Hazratbal-Srinagar, J&K 190006, India |
| Е-mail | anilmaininitsri@gmail.com |
| Issue | Volume 13, Year 2021, Number 5 |
| Dates | Received 06 November 2020; revised manuscript received 20 October 2021; published online 25 October 2021 |
| Citation | A. Maini, M.A. Shah, J. Nano- Electron. Phys. 13 No 5, 05018 (2021) |
| DOI | https://doi.org/10.21272/jnep.13(5).05018 |
| PACS Number(s) | 81.20.ka, 81.70.Pg, 61.72.Uj |
| Keywords | CuO (8) , Sol-gel (17) , Optical band gap (7) , Nanoparticles (70) , DC conductivity, Optoelectronic (5) . |
| Annotation |
In this paper, a wide band gap semiconductor CuO has appeared as a promising material suitable for high-temperature, high-frequency, and high-power operations in electronics as well as optoelectronic devices because of its exceptional characteristics. In particular, CuO films have an outstanding ability to materialize short-wavelength light-emitting devices due to the large band gap energy. CuO films are widely used for optoelectronic applications in the short wavelength visible light region especially for laser diodes (LDs) and light-emitting diodes (LEDs). Here, we report the properties of a copper oxide thin film prepared by the sol-gel technique, which is very economical and involves a sophisticated method. The prepared film is characterized by X-ray diffraction (XRD) for structural analysis. The scanning electron microscope identifies porous morphology, and the elemental composition of CuO is confirmed by EDS. The appearance of strong and weak Raman peaks at 300-350 cm – 1 is observed. The optical study is carried out by UV-visible absorbance from the direct band gap calculated for the prepared film, that is 2.43 eV. The I-V measurements are performed using a two-probe technique, and the CuO film shows semiconductor behavior with an activation energy of 0.21 eV. Thus, the obtained results indicate the prepared sample for electronic devices and various other optical applications. |
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