Photosensitive n-Zn0.5Cd0.5O/p-InSe Heterostructures Prepared by Magnetron Sputtering

Authors Z.R. Kudrynskyi1,2, I.G. Tkachuk2, V.I. Ivanov2, V.V. Khomyak2

1Advanced Materials Research Group, Faculty of Engineering, University of Nottingham, University Park, Nottingham NG7 2RD, UK

2I.M. Frantsevich Institute for Problems of Materials Science of National Academy of Sciences of Ukraine, Chernivtsi Branch, 5, I. Vilde St., 58001 Chernivtsi, Ukraine

Issue Volume 13, Year 2021, Number 5
Dates Received 16 April 2021; revised manuscript received 20 October 2021; published online 25 October 2021
Citation Z.R. Kudrynskyi, I.G. Tkachuk, V.I. Ivanov, V.V. Khomyak, J. Nano- Electron. Phys. 13 No 5, 05002 (2021)
PACS Number(s) 73.40. – c, 78.66. – w
Keywords Heterostructures (2) , Photosensitivity, I-V characteristic (3) , C-V characteristic (3) .

This paper studied the electrical and photovoltaic properties of n-Zn0.5Cd0.5O/p-InSe heterostructures. The n-Zn0.5Cd0.5O film was deposited onto InSe substrate by magnetron sputtering. The advantage of using InSe as the substrate is a simple technology. The atomically smooth surface of the substrate was obtained by simple mechanical exfoliation due to chemical bonding feature of InSe crystals. It did not contain broken bonds and did not require further polishing. The quality of the grown Zn0.5Cd0.5O film was controlled by AFM. The structure of the Zn0.5Cd0.5O film and its growth processes were analyzed on the basis of AFM data. The measurement of current-voltage characteristics at different temperatures was performed for the purpose of determining the mechanism of current flow in the studied heterostructures. The features of forward and reverse branches of current-voltage characteristics were discussed. The value of the diode coefficient was calculated. The capacity-voltage characteristics were measured at room temperature. The height of the potential barrier at the interface was calculated. The photoresponse spectra of heterostructures were studied. New regularities were found that cannot be explained within the framework of the impurity photoconductivity model.

List of References