Enhancement in Visible Emission by the Doping of Ce in ZnO Thin Films
| Authors | Nishant Kumar1,2, Anu Katiyar1, R.K. Shukla1, Anchal Srivastava1 |
| Affiliations |
1Department of Physics, University of Lucknow, Lucknow-226007, India 2Department of Physics, Amiruddaula Islamia Degree College, Lucknow-226001, India |
| Е-mail | nishant1986lu@gmail.com |
| Issue | Volume 13, Year 2021, Number 2 |
| Dates | Received 10 January 2021; revised manuscript received 25 March 2021; published online 09 April 2021 |
| Citation | Nishant Kumar, Anu Katiyar, et al., J. Nano- Electron. Phys. 13 No 2, 02011 (2021) |
| DOI | https://doi.org/10.21272/jnep.13(2).02011 |
| PACS Number(s) | 42.70.Qs, 78.55.Et |
| Keywords | Ce doped ZnO, Band gap (29) , Enhanced visible emission. |
| Annotation |
Transparent Ce doped ZnO nanocrystalline thin films with crystallite size less than 46 nm are prepared by sol-gel spin coating method. Band gap increases monotonically from 3.24 to 3.30 eV with increasing doping of cerium up to 2 at. % which leads to band gap widening of 60 meV. UV emission disappears in doped samples and blue emission with continuously increasing intensity is obtained. FESEM shows that the surface consists of microclusters scattered throughout the surface making a network of clusters and voids, and EDX confirms the presence of cerium in the doped samples. |
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List of References |
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