Morphological and Electrical Characterization of SiNWs Synthesized by Electroless Metal Assisted Chemical Etching Method

Authors Rabina Bhujel1, Sadhna Rai1, Utpal Deka2, Joydeep Biswas3, Bibhu Prasad Swain4
Affiliations

1Centre for Materials Science and Nanotechnology, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Majhitar, Rangpo-737136, East Sikkim, India

2Department of Physics, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Majhitar, Rangpo-737136, East Sikkim, India

3Department of Chemistry, Sikkim Manipal Institute of Technology, Sikkim Manipal University, Majhitar, Rangpo-737136, East Sikkim, India

4Department of Physics, National Institute of Technology, Manipur, Langol-795004, India

Е-mail bibhuprasad.swain@gmail.com
Issue Volume 13, Year 2021, Number 2
Dates Received 10 January 2021; revised manuscript received 25 March 2021; published online 09 April 2021
Citation Rabina Bhujel, Sadhna Rai, et al., J. Nano- Electron. Phys. 13 No 2, 02003 (2021)
DOI https://doi.org/10.21272/jnep.13(2).02003
PACS Number(s) 81.16.Be
Keywords SiNWs (2) , EMACE, SEM (107) , I-V characteristics (2) .
Annotation

Silicon nanowires (SiNWs) were synthesized by following two-step electroless metal-assisted chemical etching method (EMACE) by taking silver as the metal catalyst. The effect of AgNO3 concentration on the growth of SiNWs was studied with the help of scanning electron microscopic (SEM) images of SiNWs. The confirmation of the Si material was done with the help of X-ray diffraction (XRD) and energy dispersive X-ray (EDS) spectrum of SiNWs. As studied the optimum concentration required for the growth of SiNWs was 20 and 25 mM of AgNO3 solution. The I-V characteristics curves for SiNWs show diode characteristics as expected with the formation of a rectifying junction. The current obtained in the reverse biased region is very low of the order of 10 – 7 for SiNWs synthesized by using 20 mM AgNO3 concentration as compared to the using 25 mM AgNO3 prepared SiNWS, which attributes its superiority in the application of ultra-small sized photodiodes with high sensitivity. Therefore, the current research work shows the variety of applications of SiNWs in electrics, optoelectronics as well as in sensors due to their very good electrical conductivity and their diode characteristics.

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