Density of Surface States in 3D Topological Insulators in the Presence of Magnetic Field with Hexagonal Warping Effect

Authors I.N. Fedulov

Yugra State University, 16, Chekhov St., 628011 Khanty-Mansiysk, Russia

Issue Volume 11, Year 2019, Number 5
Dates Received 22 June 2019; revised manuscript received 20 October 2019; published online 25 October 2019
Citation I.N. Fedulov, J. Nano- Electron. Phys. 11 No 5, 05014 (2019)
PACS Number(s) 73.20.At, 75.75. − c
Keywords Density of surface states, Topological insulator, Spin-orbit interaction, 2D electron gas, Rashba’s interaction, Magnetic field (7) , Hexagonal warping effect.

The behavior of the density of surface states (DOS) in 3D topological insulators of Rashba-type in the presence of static magnetic field is described in the paper. The influence of the hexagonal warping effect which is inherent to second generation of the topological insulator made on the basis of Bi2Se3 and Bi2Te3 is taken into account. In our work, a method is proposed for numerically determining the DOS, taking into account the influence of an external magnetic field. We have shown that the behavior of the DOS in these topological insulators has the qualitative differences from the behavior of 2D electron gas with spin-orbit interaction of Rashba-type without hexagonal warping effect. The results of our work have shown that in case of sufficiently weak fields, instead of the expected increase in the DOS with increasing applied magnetic field, there is observed its decrease. Estimated threshold values of the field are of the order of 1-10 G.

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