Amplitude-time Characteristics of Switching in Thin Films of Cadmium Telluride
| Authors | М.G. Khrypunov , R.V. Zaitsev , D.A. Kudii , A.L. Khrypunova |
| Affiliations |
National Technical University «Kharkiv Polytechnic Institute», 2, Kyrpychov Str., 61002 Kharkiv, Ukraine |
| Е-mail | |
| Issue | Volume 10, Year 2018, Number 1 |
| Dates | Received 21 January 2018; published online 24 February 2018 |
| Citation | М.G. Khrypunov, R.V. Zaitsev, et al. J. Nano- Electron. Phys. 10 No 1, 01016 (2018) |
| DOI | 10.21272/jnep.10(1).01016 |
| PACS Number(s) | 68.55.Jk, 68.47.Fg |
| Keywords | Cadmium Telluride films, Amplitude-time characteristics, X-ray diffractometry (2) , Scanning electron microscopy (16) , Melted high-conductivity channel. |
| Annotation |
The amplitude-time characteristics of switching in thin films of cadmium telluride were investigated when single impulses of 1 μs duration are applied. It has been experimentally established that with an increase in the thickness of the cadmium telluride layer from 3 mm to 8 mm, an increase in the operating threshold from 70 V to 105 V is observed. The maximum residual sample voltage varies from 12 V to 40 V, the minimum – from 5 V to 20 V. The switching time of the samples was no more than 2 nanoseconds; the interelectrode capacity of the samples was no more than 2 pF. All the test samples were operated without failure 20 times. The structural studies of cadmium telluride films by the method of X-ray diffractometry and scanning electron microscopy have made it possible to propose a mechanism for realizing the monostable switching of the columnar structure of cadmium telluride films oriented in the form of melted high-conductivity channels in grains oriented in the [111] direction. |
|
List of References |
Other articles from this number
1) Effect of Sintering Temperature on Structural Properties of Cd doped Co-Zn Ferrite [01001-1-01001-4]2) Thermodynamical Investigation of Liquid Alkali Metals with Gibbs-Bogoliubov Method [01002-1-01002-4]
3) Effect of Source Solution Components on Quality of Electrospun PVDF Nanofibers for Nanogenerator Application [01003-1-01003-6]
4) Structural and Optical Properties ZnO Nanorods Prepared by Hydrothermal Method [01004-1-01004-4]
5) Modeling the Effects of Temperature and Doping Density on the Performance of Mid-infrared Quantum Cascade Lasers [01005-1-01005-5]
6) One Pot Room Temperature Synthesis of CTAB Capped Highly Luminescent CdTe Quantum Dots in an Aqueous Medium and their Free Radical Scavenging Activity [01006-1-01006-5]
7) Films CdS Grown on Porous Si Substrate [01007-1-01007-4]
8) Realization and Characterization of P-typed Polythiophene Based Organic Photovoltaic Cells [01008-1-01008-5]
9) Miniaturized CPW-Fed Planar Monopole Antenna for Multi-band WLAN/WiMAX Wireless Applications [01009-1-01009-9]
10) The Influence of Layers Thickness on the Structure and Properties of Bilayer Multiperiod Coatings Based on Chromium Nitride and Nitrides of Transition Metals Ti and Mo [01010-1-01010-6]
11) Strain Properties of Thin Film Nanostructures Based on Permalloy and Silver [01011-1-01011-4]
12) Complex Elastic, Dielectric and Piezoelectric Parameters of Lead-free Ferroelectric Ceramics [01012-1-01012-4]
13) Thermal Properties of InxTl1-xI Solid State Solutions [01013-1-01013-4]
14) The Model of Nucleation of Nanometer Structure of the Adatoms Under the Action of Com-prehensive Pressure [01014-1-01014-6]
15) Photoluminescence of the Porous Silicon - Tetramethylammonium Manganese Chloride Hybrid Structures [01015-1-01015-5]
16) Functionalization of Silicon Surface by Self-Organized Germanium Structures [01017-1-01017-4]
17) Optical Properties of Surface Metal-Dielectric Composites Based on Si and SiO2 [01018-1-01018-8]
18) Determination of the Power Constants of the Acoustic Emission Signals in the Equations of the Model of the Complex Structure Motion of a Continuous Medium [01019-1-01019-6]
19) Photoelectric Properties of Nanocomposite Ionotronic Structures Based on 2D Layered Semiconductor InSe and a Melt of Ionic RbNO3 Salt [01020-1-01020-7]
20) Regularities of Structural and Morphological Changes of Nanosystems Based on Zn Conden-sates at their Oxidation in Air Atmosphere [01021-1-01021-5]
21) Long-range Interaction between Impurity Boron Atoms and Surface Broken Bonds in Porous Silicon: DFT Calculations [01022-1-01022-5]
22) Growth of Island Films during Vapor-liquid Condensation [01023-1-01023-7]
23) Energy Spectrum of the System of Localized Two-level Quasi-particles Interacting with Polarization Phonons at Cryogenic Temperatures [01024-1-01024-6]
24) Identification of the Plasmon-resonance Characteristics of Thin Metallic Films [01025-1-01025-5]
25) Memory Element Based on Peroxide Molecule [01026-1-01026-6]
26) Equivalent Circuit of Betavoltaic Structure on Silicon pn Diode [01027-1-01027-3]
27) Electric Properties of Thin Films Cu2ZnSnSe4 and Cu2ZnSnSe2Te2 (S2) Obtained by Thermal Vacuum Deposition [01028-1-01028-3]
28) Персоналії - Суходуб Леонід Федорович [01029-1-01029-2]
