Thermal Properties of InxTl1-xI Solid State Solutions

Authors A.I. Kashuba, A.V. Franiv, V.A. Franiv

Franko National University of Lviv, 8, Kyrylo and Mephodiy St., 79005 Lviv, Ukraine

Issue Volume 10, Year 2018, Number 1
Dates Received 28 September 2017; revised manuscript received 23 October 2017; published online 24 February 2018
Citation A.I. Kashuba, A.V. Franiv, V.A. Franiv, J. Nano- Electron. Phys. 10 No 1, 01013 (2018)
DOI 10.21272/jnep.10(1).01013
PACS Number(s) 81.70.Pg
Keywords Solid state solutions, Layered structure, Structural transformations, Anomalous regions, Differential thermal analysis.

The results of the previous thermal characterization of InxTl1-xI solid state solutions for the concentrations of the indium component x = 0.5; 0.8 are present. The crystals have an orthorhombic layer structure of the group D2h17 (Cmcm) at room temperature. The temperature behavior of InxTl1-xI solid state solutions were studied on the basis of differential thermal analysis. Assumptions are made about the causes of the occurrence of abnormal dependence regions ΔU(T) in the region of high temperatures. The possibility of nano- and micro- structures formations in of InxTl1-xI solid state solutions is considered.

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