Functionalization of Silicon Surface by Self-Organized Germanium Structures

Authors M.I. Zakirov, V.V. Kuryliuk
Affiliations

Taras Shevchenko National University of Kyiv, Kyiv 01601, Ukraine

Е-mail [email protected]
Issue Volume 10, Year 2018, Number 1
Dates Received 20 October 2017, revised manuscript received 27 October 2017, published online 24 February 2018
Citation M.I. Zakirov, V.V. Kuryliuk, J. Nano- Electron. Phys. 10 No 1, 01017 (2018)
DOI 10.21272/jnep.10(1).01017
PACS Number(s) 73.20.At, 81.70.Fy
Keywords Silicon (58) , Germanium (3) , Surface (43) , Functionalization.
Annotation

Using of chemical deposit technique the silicon wafer surface functionalized out by germanium precursor. With the help of Fourier spectra of infrared absorption, the features of chemical bonds in the near-surface region of Si plates after their functionalization are analyzed. Using the method of SPV, features of the processes of recombination of photogenic charge carriers after processing of the surface of silicon investigated. It is revealed that the proposed method of surface functionalization causes an increase in the relaxation time of nonequilibrium charge carriers.

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