Identification of the Plasmon-resonance Characteristics of Thin Metallic Films

Authors M.Yu. Barabash

Technical Centre NAS of Ukraine, 13, Pokrovska Str., 04070 Kiev, Ukraine

Issue Volume 10, Year 2018, Number 1
Dates Received 26 October 2017; revised manuscript received 01 November 2017; published online 24 February 2018
Citation M.Yu. Barabash, J. Nano- Electron. Phys. 10 No 1, 01025 (2018)
DOI 10.21272/jnep.10(1).01025
PACS Number(s) 73.61. - r, 78.30. - j
Keywords Optical resonance, Thin films (60) , Raman scattering (4) , Clusters (9) .

In this paper, the properties of thin (10-100 nm, R > 7 W) copper films deposited on glass substrates at T = 300 K are considered. The thin films were produced by thermal evaporation in a vacuum with a residual gas pressure (10 – 2-10 – 3 Pa). The substrates had luminescence under exciting by Raman light (Raman scattering) of 30 mW power, with a wavelength of 785 nm. The resonances were identified by comparing the absorption and Raman spectra at excitation wavelengths of 633 and 785 nm. Among films with a close absorption level, films with the largest amplitude of the Raman signal had a structure with the maximum value of optical resonances. Under the influence of exciting light of 30 mW, the Raman spectrum and the color of these films changed. Copper films deposited on glass substrates at a temperature of 300 °C with an electrical resistivity R < 0.5 W/square did not have pronounced Raman peaks, their Raman spectrum and color did not change under 300 mW excitation light with a wavelength λ of 785 nm.

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