Electric Properties of Thin Films Cu2ZnSnSe4 and Cu2ZnSnSe2Te2 (S2) Obtained by Thermal Vacuum Deposition

Authors I.P. Koziarskyi, E.V. Maistruk, D.P. Koziarskyi, P.D. Maryanchuk

Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubynsky Str., 58012 Chernivtsi, Ukraine

Е-mail i.koziarskyi@chnu.edu.ua
Issue Volume 10, Year 2018, Number 1
Dates Received 15 September 2017, revised manuscript received 27 October 2017, published online 24 February 2018
Citation I.P. Koziarskyi, E.V. Maistruk, D.P. Koziarskyi, P.D. Maryanchuk, J. Nano- Electron. Phys. 10 № 1, 01028 (2018)
DOI 10.21272/jnep.10(1).01028
PACS Number(s) 73.61.Le, 81.15.Ef
Keywords Thin films (60) , CZTS (14) , Resistivity (11) , Thermal vacuum deposition.

The technological features of synthesizing and growing bulk crystals Cu2ZnSnSe4, Cu2ZnSnSe2S2 and Cu2ZnSnSe2Te2. Obtained polycrystalline ingot to 50 mm long and 10 mm in diameter. Sputtering of thin films Cu2ZnSnSe4, Cu2ZnSnSe2S2, Cu2ZnSnSe2Te2 carried out in the vacuum system UVN - 70 by thermal vacuum deposition. Investigation of the electrical properties of thin films CZTS performed by resistivity measurement. The resistivity of the films was measured by four-probe method.

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