Photoelectric Properties of Nanocomposite Ionotronic Structures Based on 2D Layered Semiconductor InSe and a Melt of Ionic RbNO3 Salt

Authors A.P. Bakhtinov 1, V.M. Vodopyanov 1, V.I. Ivanov1, Z.D. Kovalyuk1 , I.G. Tkachuk1, V.V. Netyaga1, O.S. Lytvyn2, 3

1 I.M. Frantsevich Institute for Problems of Materials Science, NAS of Ukraine, Chernivtsi Department, 5, Iryna Vilde str., 58001 Chernivtsi, Ukraine

2 Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, pr. Nauki, 03028 Kyiv, Ukraine

3 Borys Grinchenko Kyiv University, 18/2, Bulvarno-Kudriavska str., 04053 Kyiv, Ukraine

Issue Volume 10, Year 2018, Number 1
Dates Received 20 October 2017, revised manuscript received 02 November 2017, published online 24 February 2018
Citation A.P. Bakhtinov, V.M. Vodopyanov, et al., J. Nano- Electron. Phys. 10 No 1, 01020 (2018)
DOI 10.21272/jnep.10(1).01020
PACS Number(s) 81.05.Hd, 81.07. – b
Keywords Nanocomposite (27) , 2D material, Nanostructures (8) , Indium selenide, Gallium selenide.

In this work the relation between the morphology, chemical composition and photoelectric properties of vertical ionotronic nanostructures based on layered semiconductor InSe and ionic RbNO3 salt was investigated. It is established that nanostructures consisting of 2D InSe layers, ultrathin layers of In2O3 oxide and annular nanostructures of the ionic salt, which are located in the (0001) planes of InSe crystal periodically along main crystal axis, have a maximum photosensitivity. The connection between the heterogeneous morphology and the spectral distribution of photoconductivity for the ionotronic nanostructures formed on the basis of GaSe and InSe crystals and ionic MeNO3 salts (Me = K, Rb) is established. Impedance spectra, spectral distribution of photosensitivity and morphology of the surfaces of vertical ionotronic structures, formed on the basis of 2D layered semiconductor n-InSe and ionic RbNO3 salt has been investigated.

List of References