Memory Element Based on Peroxide Molecule

The paper is devoted to the study of the possibility of using individual peroxide molecules of the general formula R₁-O-O-R₂ as elements of integrated circuits. As a result of the studies, it was shown that these molecules are characterized by the double pitted potential surface when the value of the dihedral angle R₁-O-O-R₂ is changed. In this case, the dipole moment of the symmetric substituted peroxide molecules is oriented perpendicularly to the bond O-O from its midpoint along the bisector between the directions of R-O-bonds. When applying an external homogeneous electric field directed along the O-O-bond, the double pitted potential surface becomes asymmetric, which determines the transition from one conformation of the molecule to another, changing the direction of the dipole moment to the opposite one. However, such field is not capable to order the dipole moments of different molecules. The latter can be achieved by applying an inhomogeneous electric field directed along the dipole moment of the molecule. On the other hand, asymmetric molecules with simple substituents under the action of an external electric field can only change the direction of optical activity. The use of large molecular fragments as substituents results in the loss of the sensitivity of molecules to an external electric field.