Numerical Approach of the Influence of Geometric Properties on the Absorbing in Photonic Crystal

Authors A. Merabti1, A. Hasni2, M. Elmir2

1 Semiconductor Devices Physics Laboratory, Tahri Mohamed University of Bechar, BP 417, Bechar, Algeria

2 Energarid Laboratory, Tahri Mohamed University of Bechar, BP 417, Bechar, Algeria

Issue Volume 8, Year 2016, Number 3
Dates Received 25 March 2016; published online 03 October 2016
Citation A. Merabti, A. Hasni, M. Elmir, J. Nano- Electron. Phys. 8 No 3, 03046 (2016)
DOI 10.21272/jnep.8(3).03046
PACS Number(s) 42.70.Qs, 73.50.Pz, 85.60.Bt
Keywords Dimensional structure, Finite element method (FEM) (3) , Absorption (17) , Light trapping (4) .
Annotation In the proposed study, an investigation has been carried out in order to find a material efficient structure, capable of harnessing maximum solar spectrum. A material efficient structure designed using a one dimensional photonic crystal (1D PC) for amorphous silicon. Silicon material is used as it leads to environmental friendly design. The principal objective of this study is to maximize the photon absorption, keeping reflection to a minimum. The influence of geometric parameters on the absorption is studied by using the Finite element method (FEM). The results show that the absorption is affected by the geometry parameters. The optimum parameters of the proposed structure are period (a  480 nm), a filling factor (ff  50 %) and depth (d  150 nm). The increase of absorption in the lower region where the wavelengths are around 480 nm, is explained by the reduction of the effective index resulting from the structure of the absorbent layer. For wavelengths between 480 nm and 600 nm, the absorption is directly related to existing Fabry-Perot modes within the absorbent layer. Creating additional absorption peaks at wavelengths above about 600 nm weakly absorbed normally comes from the coupling of the incident light with slow Bloch modes of PC located above the light line.

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