Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium

Authors D.Yu. Matveev

Astrakhan State University, 20a, Tatischev st., 4140056 Astrakhan, Russia

Issue Volume 8, Year 2016, Number 3
Dates Received 15 May 2016; published online 03 October 2016
Citation D.Yu. Matveev, J. Nano- Electron. Phys. 8 No 3, 03012 (2016)
DOI 10.21272/jnep.8(3).03012
PACS Number(s) 73.50.Gr, 73.50.Jt
Keywords Thin films (60) , Bismuth (9) , Tellurium (3) , Mobility (10) , Size effect (6) .
Annotation The article compares carrier mobility in monocrystals, as well as monocrystal and block films of different width thus defining carrier contribution to interaction with phonons, surface, boundaries and structural defects of crystallites in bismuth films doped with tellurium. It is determined that there is a linear dependence of inverse electron mobility on inverse width of bismuth film doped with tellurium.

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