Practical Analysis of the Properties of Nanoscale Electronic Elements Aimed at their Application when Designing Parallel Architecture Computing Systems
| Authors | M.V. Makarov |
| Affiliations | Murom Institute of Vladimir State University, 23, Orlovskaya st., 602264 Murom, Russia |
| Е-mail | |
| Issue | Volume 8, Year 2016, Number 3 |
| Dates | Received 22 April 2016; published online 03 October 2016 |
| Citation | M.V. Makarov, J. Nano- Electron. Phys. 8 No3, 03035 (2016) |
| DOI | 10.21272/jnep.8(3).03023 |
| PACS Number(s) | 61.46. – w, 81.07. – b |
| Keywords | Nanoscale electronics, Properties of nanomaterials, Memristors, Parallel computing (2) , Fault tolerance. |
| Annotation | This article presents an approach to the practical analysis of nanomaterials which determine the reliability parameters of nanoscale electronic hardware components when they are used in developing fault-tolerant high-performance computing systems. We propose a methodology of theoretical and experimental study of the reliability values of the memristor models used as the synaptic connections of an artificial neural network that approximate a differential equation. |
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List of References |
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