Influence of the Composition on the Thermoelectric and Electro-physical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Application

Authors P.I. Lazarenko1, A.A. Sherchenkov1, S.A. Kozyukhin2,3, D.Y. Terekhov1, A.O. Yakubov1, A.V. Babich1, A.S. Shuliatyev1, I.V. Sagunova1, E.N. Redichev1
Affiliations

1 National Research University of Electronic Technology, 1, Shokin sq., 124498 Zelenograd, Moscow, Russia

2 Kurnakov Institute of General and Inorganic Chemistry, RAS, 31, Leninsky prosp., 119991, Moscow, Russia

3 National Research Tomsk State University, 634050 Tomsk, Russia

Е-mail [email protected]
Issue Volume 8, Year 2016, Number 3
Dates Received 04 May 2016; published online 03 October 2016
Citation P.I. Lazarenko, A.A. Sherchenkov, et al., J. Nano- Electron. Phys. 8 No 3, 03033 (2016)
DOI 10.21272/jnep.8(3).03033
PACS Number(s) 73.61.Jc, 73.50.Lw
Keywords Phase change memory (2) , Ge-Sb-Te, quasi-binary line GeTe-Sb2Te3, Seebeck coefficient, Electro-physical properties.
Annotation Influence of the composition variation along the quasi-binary line GeTe-Sb2Te3 on the thermoelectric and electro-physical properties of thin films was investigated. GST amorphous thin films have high Seebeck coefficients, which drops nearly on the order of magnitude after the crystallization. Temperature dependences of the resistivities were studied, and it was determined that crystallization temperature increases with moving along the quasi-binary line GeTe-Sb2Te3 from GeSb4Te7 to GeSb2Te4, and then to Ge2Sb2Te5, while the phase transition temperature range decreases. Current-voltage characteristics of amorphous thin films have three voltage ranges with different dependencies due to the different mechanisms of charge carrier transport.

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