Temperature Induced Stress Dependent Photoluminescence Properties of Nanocrystallite Zinc Oxide

Authors V. Kumar1 , R.G. Singh2, L.P. Purohit1, R.M. Mehra3

1 Department of Physics, Gurukula Kangri University, Haridwar – 249 404, India

2 Department of Electronic Science, University of Delhi South Campus, New Delhi – 110 021, India

3 School of Engineering & Technology, Sharda University, Greater Noida – 201306, India

Е-mail vinod.phy@gmail.com
Issue Volume 3, Year 2011, Number 1, Part 2
Dates Received 04 February 2011, in final form 02 May 2011, published online 08 May 2011
Citation V. Kumar, R.G. Singh, L.P. Purohit, R.M. Mehra, J. Nano- Electron. Phys. 3 No1, 388 (2011)
PACS Number(s) 61.72.Uj, 78.20.Ci, 78.30.FS, 78.55.Et
Keywords Sol-gel (17) , Stress (7) , Topography (2) , Photoluminescence (17) , Band gap narrowing (2) .
In this paper, Temperature induced stress dependent structural, optical and photoluminescence properties of nanoscrysllites ZnO (nc-ZnO) films are reported. It is seen that crystallite size, band gap and PL intensity of nc-ZnO are strongly dependent on stress. Large compressive stress has been observed at temperature 350-400 °C while minimum stress obtained at temperature 450 °C. A small amount of expensive stress is obtained at temperature 500 and 500 °C. The surface topography of the nc-ZnO films has been studied using atomic force microscopy. The optical band gap of nc-ZnO has been decreased from 3.25 to 3.23 eV as a function of temperature induced stress. The luminescence property is dependent on stress of nc-ZnO films.

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