Temperature Dependent Switching Behavior of BFN Thin Films: a Wide Band Gap Semiconductor
| Authors | Devang D. Shah1, P.K. Mehta1 , M.S. Desai2 , C.J. Panchal2 |
| Affiliations | 1 Department of Physics, Faculty of Science, The M. S. University of Baroda, 390002, Vadodara, India 2 Applied Physics Department, Faculty of Technology and Engineering, The M. S. University of Baroda, 390001, Vadodara, India |
| Е-mail | devangshah_04@yahoo.co.in |
| Issue | Volume 3, Year 2011, Number 1, Part 2 |
| Dates | Received 04 February 2011, in final form 29 April 2011, published online 08 May 2011 |
| Citation | Devang D. Shah, P.K. Mehta, M.S. Desai, C.J. Panchal, J. Nano- Electron. Phys. 3 No1, 330 (2011) |
| DOI | |
| PACS Number(s) | 61.05.Cm, 61.80.Jh, 73.61.Ey, 74.62. Yb |
| Keywords | X-ray diffraction (19) , Atomic force microscopy (9) , PLD thin films, Ion irrediation effects, Wide band gap semiconductor. |
| Annotation |
The thin film of complex perovskite Ba(Fe0.5Nb0.5)O3 (BFN) was prepared through Pulsed Laser Deposition (PLD) technique. XRD and AFM studies show single cubic phase with well developed nano size grains of BFN compound. Swift Heavy Ion (SHI) irradiation on BFN of O+7 ions up to 1 × 1013 ions per cc fluence does not show any crystal or morphological structural changes in the film, signifying materials stability up to the above ion dose. BFN compound exhibit its band gap in wide band semiconductor region (3.53 eV). A characteristic negative temperature co-efficient of resistance (NTCR) to positive temperature co-efficient of resistance (PTCR) transition of large magnitude at ~ 350 °C makes BFN a promising candidate for electrical/magnetic switching device. |
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List of References |
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