Comparison of Thermal Evaporation and Plasma Assisted Thermal Evaporation Processes for Deposition of tin Oxide Thin Films

Authors C. Jariwala1, T. Garg1, R. Rane1, N. Chauhan1, P.A. Rayjada1, C.J. Panchal2 , P.I. John1

1 Facilitation Centre for Industrial Plasma Technologies, Institute for Plasma Research, A-10/B, GIDC Electronics Estate, Sector-25, Gandhinagar 382016, Gujarat, India

2 Applied Physics Department, Faculty of Technology & Engineering, M.S. University of Baroda, Kalabhavan, Vadodara 390001, Gujarat, India

Issue Volume 3, Year 2011, Number 1, Part 2
Dates Received 04 February 2011, in final form 16 May 2011 published online 18 May 2011
Citation C. Jariwala, T. Garg, R. Rane, et al., J. Nano- Electron. Phys. 3 No1, 318 (2011)
PACS Number(s) 81.05.Gh, 81.15.Gc, 52.77 Dq
Keywords Transparent conducting oxide (6) , Tin oxide thin films (2) , Plasma assisted thermal evaporation (2) , Optical properties (20) , X-ray diffraction (19) , X-ray photoelectron spectroscopy (3) , Scanning electron microscopy (16) .
Tin oxide (SnO2) thin films are of great interest in optoelectronics industries due to their promising properties such as conductivity and optical transparency in visible-infrared (VIS-IR) region. Improvement in these two key properties of SnO2 is of technological importance. In order to find ways for these improvements in the present study, SnO2 thin films have been prepared by Thermal Evaporation (TE) in oxygen (O2) partial pressure and Plasma Assisted Thermal Evaporation (PATE) using RF (13.56 MHz) O2 plasma. Optical, structural, compositional and electrical properties of the deposited films have been investigated by varying substrate temperature in range of 250-350  °C keeping other process parameters constant. The optical transmission spectra measured in VIS-IR region of films deposited by PATE have higher transparency (~ 80-90 %) in comparison to the films grown by TE (~ 60-70 %). X-ray Diffraction (XRD) study reveal SnO & SnO2 phases present in the film. Also X-ray Photoelectron Spectrosocpy (XPS) analysis showed SnO2 – x as the only content, which is in agreement to XRD results. Surface morphology study by Scanning Electron Microscopy (SEM) shows more needle shape grains in case of films deposited by TE as compared to PATE grown films. Both types of the films were subjected to Four-probe method for the measurement of resistivity, which is in the order of 10 – 4 Ω-cm and 10 – 3 Ω-cm for PATE and TE grown respectively.

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