Effect of Annealing on Structural, Optical and Electrical Behaviours of WO3 Thin Films Prepaired by Physical Vapour Deposition Method

Authors Sunita Keshri1, Ashutosh Kumar1 , Debdulal Kabiraj2

1 Department of Applied Physics, Birla Institute of Technology Mesra, Ranchi-835215, Jharkhand, India

2 Inter University Accelerator Centre, New Delhi, India

Е-mail s_keshri@bitmesra.ac.in, sskeshri@rediffmail.com
Issue Volume 3, Year 2011, Number 1, Part 2
Dates Received 04 February 2011, published online 08 May 2011
Citation Sunita Keshri, Ashutosh Kumar, Debdulal Kabiraj, J. Nano- Electron. Phys. 3 No1, 260 (2011)
PACS Number(s) 68.55.J, 73.61.GA, 78.66.HF
Keywords Thin film (101) , Absorption cofficient, Electrochromic behaviour, Photoluminiscence (2) , Conductivity (43) .
The effect of annealing on structural, optical and electrical properties of tungsten oxide (WO3) thin films has been investigated. WO3 films has been deposited on unheated corning glass and silicon substrates by physical vapour deposition, followed by annealing at temperatures 3000 °C and 5000 °C for 1 h in oxygen atmosphere. The as grown WO3 film is amorphous whereas the annealed films show monoclinic crystalline behaviour. It has been observed that the films annealed at 3000 °C for 1 h had low surface roughness, good adhesion, high optical transmittance (upto 65 %) in the visible-infrared spectral range and good photoluminescence property in blue wavelength range. It is found form the transmittance spectra that the absorption edge is slightly shifted towards the longer wavelength region for the films annealed at higher temperatures. The present data could help to develop general strategies for the improvement of electrochromic and sensor devices based on WO3 film.

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