Correlation of Raman and Photoluminescence Spectra of Al2O3 Capped Silicon Nanoparticles Grown by Reactive Pulsed Laser Deposition

Authors A.P. Detty1,2, L.M. Kukreja1, B.N. Singh1, V.G. Sathe3, T. Shripathi3, V.P. Mahadevan Pillai2
Affiliations

1 Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013, Madhya Pradesh, India

2 Department of Optoelectronics, University of Kerala, Karyavattom, 695581, Thiruvananthapuram, Kerala, India

3 UGC-DAE Consortium for Scientific Research, Khandwa Road, 452 017, Indore, Madhya Pradesh, India

Е-mail [email protected]
Issue Volume 3, Year 2011, Number 1, Part 2
Dates Received 04 February 2011, in final form 03 May 2011, published online 08 May 2011
Citation A.P. Detty, L.M. Kukreja, B.N. Singh, et al., J. Nano- Electron. Phys. 3 No1, 323 (2011)
DOI
PACS Number(s) 73.21. – b, 73.22. – f
Keywords Silicon nanoparticles (2) , Reactive pulsed laser deposition, Photoluminescence (17) , Micro-Raman spectra, Interface energy states.
Annotation
Synthesis and observation of a correlation between the Raman spectra and photoluminescence (PL) of silicon nanoparticles (Si-nps) embedded in Al2O3 matrix grown by reactive pulsed laser deposition in oxygen atmosphere are reported. We observed a strong dependence of the band gap, photoluminescence intensity and Raman spectra of Si-nps on the ambient oxygen gas pressure during the deposition. It appears that with increasing oxygen pressure the enhanced oxidation of silicon into SiOx, which surrounds the Si-nps is responsible for the increase in the band gap, enhancement in the PL intensity and suppression of the Si related Raman mode observed in these studies.

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