Correlation of Raman and Photoluminescence Spectra of Al2O3 Capped Silicon Nanoparticles Grown by Reactive Pulsed Laser Deposition
| Authors | A.P. Detty1,2, L.M. Kukreja1, B.N. Singh1, V.G. Sathe3, T. Shripathi3, V.P. Mahadevan Pillai2 |
| Affiliations | 1 Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore, 452013, Madhya Pradesh, India 2 Department of Optoelectronics, University of Kerala, Karyavattom, 695581, Thiruvananthapuram, Kerala, India 3 UGC-DAE Consortium for Scientific Research, Khandwa Road, 452 017, Indore, Madhya Pradesh, India |
| Е-mail | dettyalappatt@gmail.com |
| Issue | Volume 3, Year 2011, Number 1, Part 2 |
| Dates | Received 04 February 2011, in final form 03 May 2011, published online 08 May 2011 |
| Citation | A.P. Detty, L.M. Kukreja, B.N. Singh, et al., J. Nano- Electron. Phys. 3 No1, 323 (2011) |
| DOI | |
| PACS Number(s) | 73.21. – b, 73.22. – f |
| Keywords | Silicon nanoparticles (2) , Reactive pulsed laser deposition, Photoluminescence (17) , Micro-Raman spectra, Interface energy states. |
| Annotation |
Synthesis and observation of a correlation between the Raman spectra and photoluminescence (PL) of silicon nanoparticles (Si-nps) embedded in Al2O3 matrix grown by reactive pulsed laser deposition in oxygen atmosphere are reported. We observed a strong dependence of the band gap, photoluminescence intensity and Raman spectra of Si-nps on the ambient oxygen gas pressure during the deposition. It appears that with increasing oxygen pressure the enhanced oxidation of silicon into SiOx, which surrounds the Si-nps is responsible for the increase in the band gap, enhancement in the PL intensity and suppression of the Si related Raman mode observed in these studies. |
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List of References |
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