Volatile and Non-Volatile Single Electron Memory
| Authors | A. Touati , A. Kalboussi |
| Affiliations | Microelectronics Laboratory and Instrumentation (UR/03/13-04), Faculty of Sciences of Monastir, Avenue de l’Environnement, 5019 Monastir, Tunisia |
| Е-mail | Amine.Touati@istls.rnu.tn, Adel.Kalboussi@fsm.rnu.tn |
| Issue | Volume 5, Year 2013, Number 3 |
| Dates | Received 28 December 2012; published online 12 July 2013 |
| Citation | A. Touati , A. Kalboussi , J. Nano- Electron. Phys. 5 No 3, 03003 (2013) |
| DOI | |
| PACS Number(s) | 85.35.Gv |
| Keywords | Single electron memory, Multi tunnel junctions, Quantum dot memories, Write time, Retention time, SIMON. |
| Annotation | Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Devices (SED) in particular Single-Electron Memory (SEM). In this paper, we have design and study a nano-device structure using a two dimensional array MTJs for Volatile and Non-Volatile-SEM, in order to analyze the impact of physical parameters on the performances. We investigate the single-electron circuit characteristics in our devices qualitatively, using single-electron Monte Carlo simulator SIMON. |
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List of References |
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