Spectroscopic Characterization of GaAs and AlxGa1 – xAs / AlyGa1 – yAs Quantum Well Heterostructures

Authors	Mirgender Kumar¹, V.P. Singh²
Affiliations	¹ Indian Institute of Technology (Banaras Hindu University), Varanasi-221005 India ² Indian Institute of Technology, Kharagpur-721302 India
Е-mail	mkumar.rs.ece@iitbhu.ac.in
Issue	Volume 5, Year 2013, Number 3
Dates	Received 09 January 2013; revised manuscript received 02 July 2013; published online 12 July 2013
Citation	Mirgender Kumar, V.P. Singh, J. Nano- Electron. Phys. 5 No 3, 03006 (2013)
DOI
PACS Number(s)	73.40.Kp, 42.55.Pх
Keywords	Photoreflectance spectroscopy, Surface photovoltaic spectroscopy, HRXRD (3) , Heterostructures (2) .
Annotation	This work presents the results of the characterization of GaAs and AlxGa1 – xAs / AlyGa1 – yAs quantum well hetero-structures growth by MOVPE system. The main goal is to explore the ability of characterization techniques for multilayer structures like quantum wells. The characterization was performed using photoreflectance spectroscopy, surface photovoltaic spectroscopy and X-ray diffraction. The experimental results are verified by numerical simulation.
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