Electronic and Optical Properties of GaN / AlN Multiple Quantum Wells under Static External Magnetic Field

Authors M. Solaimani , M. Izadifard

Faculty of Physics, Shahrood University of Technology, Shahrood, Iran

Issue Volume 5, Year 2013, Number 3
Dates Received 21 April 2013; revised manuscript received 08 May 2013; published online 12 July 2013
Citation M. Solaimani, M. Izadifard, J. Nano- Electron. Phys. 5 No 3, 03023 (2013)
PACS Number(s) 68.65.Fg, 71.35. – y
Keywords Electronic energy levels, Magnetic field (7) , Single and multiple quantum wells, Finite difference method (2) , Linear absorption coefficient.
Annotation In this work, we have investigated the effect of an external magnetic field and, for the first time, number of wells with constant total effective length to study the degeneracy in electronic energy levels. We have used constant total effective length because it is technologically important. Then we have tried to remove the n-fold degeneracy of the n-well multiple quantum well by means of the external magnetic field but the two-fold degeneracy was remain and not removed. Finally, the effect of the external magnetic field on the number of bound states and the situation of unchanging absorption coefficient in a wide magnetic field interval are also investigated.

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