Optical and Electrochemical Properties of Layered Crystals GaSe Intercalated by the Nickel
| Authors | S.G. Barbutsa, V.B. Boledzyuk , Z.D. Kovalyuk , M.M. Pyrlya , T.M. Feshak |
| Affiliations |
I.M. Frantsevich Institute for Problems of Materials Science, NAS of Ukraine, Chernivtsi Departament, 5, Iryna Vilde Str., 58001 Chernivtsi, Ukraine |
| Е-mail | |
| Issue | Volume 5, Year 2013, Number 3 |
| Dates | Received 26 July 2013; revised manuscript received 23 September 2013; published online 17 October 2013 |
| Citation | S.G. Barbutsa, V.B. Boledzyuk, Z.D. Kovalyuk, et al., J. Nano- Electron. Phys. 5 No 3, 03053 (2013) |
| DOI | |
| PACS Number(s) | 78.66.Fd, 78.66.Qn |
| Keywords | Layered crystals, Intercalation (2) , Intercalates of nickel, Electrode potential, Exiton spectra. |
| Annotation | The presented results of the investigations of the optical and electrochemical properties indicate the possibility of intercalation of layered GaSe crystals with nickel ions. Established that the electrochemical introduction of Ni leads to a monotonic growth in electrode potential of layered semiconductors GaSe when a concentration of intercalants nNi 1018-1020сm – 3. In consequence of intercalation of nickel in GaSe crystal at T 293 K, occurred ncreases in the energy position of the exciton peak Eeks 6 meV (from 2.008 to 2.014 eV) and the half-width of the exciton absorption bands of H by 5.2 meV. At a temperature T 77 K was detected non- monotonous concentration dependence of the excitonic maximum energy location for Еeks NiGaSe compounds. The dependence Еeks(nNi) for these compounds are explained as a result of the introduction of competition between contributions of inter - and intralayer deformations which have the opposite signs of deformation potential. |
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List of References English version of article |
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