Performance Analysis of Vertical Gate-All-Around Multi-Bridge Channel Field Effect Transistor for Low-Power Applications

The study focuses on the Vertical Gate-All-Around Multi-Bridge-Channel Field-Effect Transistor (VGAA-MBCFET), which is a critical component in developing low-power applications. Several optimization strategies are being investigated to improve VGAA-MBCFET performance, with a particular focus on improving the on-off ratio, reducing leakage current, and fine-tuning I-V characteristics. The study emphasizes the distinctive vertical gate-all-around structure and scalability benefits that distinguish VGAA- MBCFETs from horizontal counterparts such as FinFETs and lateral GAAFETs. In-depth research on the scalability of VGAA-MBCFETs into smaller technological nodes is a significant priority, since it is recognized as crucial to influencing the future of sophisticated and compact integrated circuits. The paper acknowledges these innovations revolutionary impact on large-scale integration (LSI) improvements, as well as their influence on the trajectory of wearable technology within the larger context of integrated circuit miniaturization the issues provided by downsizing are openly discussed, with recognition of their complicated impact on wearable performance and functionality. As wearable technology aims to incorporate high-performance computing systems, this study addresses the constraints of traditional techniques and investigates whether VGAA-MBCFETs can be a transformative technology, allowing for compact yet powerful designs in energy-efficient electronic gadgets. The study uses robust modelling approaches to provide thorough insights into the capabilities and possible applications of VGAA-MBCFETs, providing a significant contribution to the ongoing progress of low-power electronic device technology.