Nickel Clusters in the Silicon Lattice
| Authors | K.A. Ismailov1, N.F. Zikrillaev2, B.K. Ismaylov1, Kh. Kamalov1, S.B. Isamov2, Z.T. Kenzhaev2 |
| Affiliations |
1Karakalpak State University, KAR, 230112 Nukus, Uzbekistan 2Tashkent State Technical University, 100095 Tashkent, Uzbekistan |
| Е-mail | |
| Issue | Volume 16, Year 2024, Number 5 |
| Dates | Received 21 May 2024; revised manuscript received 22 October 2024; published online 30 October 2024 |
| Citation | K.A. Ismailov, N.F. Zikrillaev, B.K. Ismaylov, et al., J. Nano- Electron. Phys. 16 No 5, 05022 (2024) |
| DOI | https://doi.org/10.21272/jnep.16(5).05022 |
| PACS Number(s) | 36.40. – c, 66.30.Fq |
| Keywords | Silicon (58) , Nickel (7) , Cluster (16) , Thermal donors, Temperature (46) , Gettering, Diffusion (11) , Lifetime (2) . |
| Annotation |
The paper studies the gettering properties of nickel clusters in the silicon lattice. The gettering properties of nickel clusters were studied in various states, i.e., in original (reference) samples, as well as in samples with additionally doped interstitial and lattice site impurity atoms of sulfur and manganese. The electrophysical and photoelectric parameters were studied using modern instrumentation: INFRAM-I-type infrared microscope, IKS-21 and scanning electron microscope SEM (Oxford Instruments ZEISS EVOMA10), IKS-21. A new technology has also been proposed that makes it possible to getter harmful impurities; it is recommended for widespread use in the electronics industry and scientific research institutes for the production of materials with stable parameters and the development of fundamentally new devices. |
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