Design and Analysis of Charge Plasma-Based Heterogeneous L-Shaped Tunnel Field-Effect Transistor (TFET) for Low-Power Applications

In this proposed work focuses to overcome the traditional doping challenges in L-shaped tunnel field transistors by using charge plasma (CP) concept and increase current conduction by forming heterogeneous junction (SiC-Si-SiC). Silicon carbide is used for the material for Source and Drain. The concept of charge plasma is implemented in the source and drain regions by implementing different work functions and to improve current conduction the source and drain regions is made of Silicon Carbide and the channel is made of Silicon which forms heterojunction which creates horizontal tensile strain and vertical compressive strain in the channel region which increases electron mobility mainly for low-power semiconductor applications. The performance of device parameters like the transfer characteristics subthreshold swing, output characteristics have been described. Analysis of Threshold Voltage, drain current and ION/IOFF ratio have been carried for CP based L-TFET. Sentaurus Technology Computer Aided Design (TCAD) has been used to evaluate and analyze the device for the CP-based TFET. The device was simulated in the Sentaurus TCAD in which the certain parameters are evaluated in which certain models such as, Slotboom model is applied to consider the impact of doping concentrations on energy bandgap narrowing in the source/drain (S/D) regions. Also, Fermi statistics and Shockley-Read-Hall recombination models are used. The inclusion of charge plasma and SiC in the device improves the electron mobility and current conduction is improved with less leakage current and can be used for low power applications such as inverter, memory devices.