Photodetectors Based on CdTe:Li
| Authors | M.M. Slyotov1, T.M. Mazur2, O.M. Slyotov1, O.V. Kinzerska1, M.P. Mazur2 |
| Affiliations |
1Yuri Fedkovich Сhernivtsi National University, Chernivtsi, Ukraine 2Ivano-Frankivsk National Technical University of Oil and Gas, Ivano-Frankivsk, Ukraine |
| Е-mail | myroslav.mazur@nung.edu.ua |
| Issue | Volume 16, Year 2024, Number 5 |
| Dates | Received 25 June 2024; revised manuscript received 19 October 2024; published online 30 October 2024 |
| Citation | M.M. Slyotov, T.M. Mazur, O.M. Slyotov, и др., J. Nano- Electron. Phys. 16 No 5, 05031 (2024) |
| DOI | https://doi.org/10.21272/jnep.16(5).05031 |
| PACS Number(s) | 61.43.Gt, 68.37.Ps, 78.30.Fs, 78.55. – m |
| Keywords | Cadmium telluride (2) , Li impurity, Photosensitive heterostructures, High quantum intensity, LiCd centers, Interband transitions. |
| Annotation |
The optimal modes for doping CdTe with Li impurity have been established. Photodetectors based on Au-CdTe:Li surface barrier diodes have been manufactured. The optical parameters and photoelectric characteristics of heterostructures have been studied, the region of their photosensitivity of 1.4÷5.0 eV and the mechanisms of its formation during interband transitions and through local LiCd centers have been determined. Au-CdTe:Li structures with high photosensitivity were obtained due to the high potential barrier 0 formed on the modified CdTe surface. The high quantum efficiency η = 12% of CdTe:Li determines the production of photodetectors with typical values of open circuit voltage Voc and short circuit current Isc, which are 0.7 V and 10 mA/cm2 under AM2 solar illumination. Their efficiency can be 10%. Temperature coefficient of change in efficiency CdTe-based solar cells are almost four times smaller than silicon ones. A high quantum efficiency of η = 12% radiation in the edge region was obtained. The proposed approach to modifying the CdTe surface and doping with Li allows for a significant increase in the photosensitivity of structures and opens up new possibilities for developing highly sensitive photodetectors for different spectral ranges. |
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