A Simulation Study on the Performance of Double Gate Junctionless Field Effect Transistor for Doping Concentration Variation

Authors P. Saikia, A.K. Raibaruah , K.C.D. Sarma
Affiliations

Central Institute of Technology Kokrajhar, Department of Instrumentation Engineering, 783370, India

Е-mail ak.raibaruah@cit.ac.in
Issue Volume 16, Year 2024, Number 5
Dates Received 12 June 2024; revised manuscript received 20 October 2024; published online 30 October 2024
Citation P. Saikia, A.K. Raibaruah, K.C.D. Sarma, J. Nano- Electron. Phys. 16 No 5, 05016 (2024)
DOI https://doi.org/10.21272/jnep.16(5).05016
PACS Number(s) 85.30.Tv
Keywords Junctionless (3) , Field effect (3) , DGJLFET, Doping (20) , Threshold voltage (15) , Subthreshold swing.
Annotation

We report here a study on doping concentration variation on Double Gate Junctionless Field Effect Transistor. Doping concentration for the device is varied from 1010/cm3 to 1019/cm3 and their transfer characteristics and output characteristics were investigated for drain section voltages with 0.1 V, 0.5 V and 1 V. At 1 V drain voltage with doping level 1019 cm – 3 a drain current of 1.7 mA has been obtained. Furthermore various electrical parameters like on current, ION to IOFF ratio, subthreshold swing, threshold voltages are investigated. At 1019 cm – 3 and drain potential 1 V current in body is 1.9 mA. On the other hand subthreshold swing obtained at 1019 cm – 3 with a drain potential 1 V is 79 mV/Decade. The simulation is done with the help of Cogenda Visual TCAD simulator. By increasing doping concentration better control over drain current can be obtained. Better on current can be achieved at higher doping variation.

List of References