Reduction of Interface Mixing in Sc/Si Multilayer X-ray Mirrors
| Authors | Yu.P. Pershyn1 , A.Yu. Devizenko1 , V.V. Kondratenko1 , D.L. Voronov2 , E.M. Gullikson2 |
| Affiliations | 1 National Technical University “Kharkiv Polytechnic Institute”, 2, Kyrpychov Str., 61002 Kharkiv, Ukraine 2 Advanced Light Source, Berkeley National Laboratory, 1, Cyclotron Road, MS 15R0217, Berkeley, CA 94720 |
| Е-mail | persh@kpi.kharkov.ua |
| Issue | Volume 9, Year 2017, Number 2 |
| Dates | Received 05 December 2016; revised manuscript received 26 April 2017; published online 28 April 2017 |
| Citation | Yu.P. Pershyn, A.Yu. Devizenko, V.V. Kondratenko, et al., J. Nano- Electron. Phys. 9 No 2, 02029 (2017) |
| DOI | 10.21272/jnep.9(2).02029 |
| PACS Number(s) | 61.05.cm, 61.43.Dq, 68.65.Ac, 41.50. + h, 07.85.Fv |
| Keywords | Multilayer X-ray mirror, Interface zone mixing, Zone contraction, Argon pressure, Reflectivity growth. |
| Annotation | By methods of X-ray diffraction in both hard ( 0.154 nm) and soft ( 11.7-50.0 nm) regions an influence of Ar pressure (1.6-2.4 mTorr) on interface mixing in Sc/Si multilayer X-ray mirrors (MXMs) during deposition is studied. Significant reduction in activity of interface zone formation with Ar pressure for both interfaces is revealed. That is manifested in zone thickness contraction at least by factor of 3. The zones in all studied MXMs are established to have the same composition corresponding to monosilicide (ScSi). The zone reduction is followed by reflectivity growth of Sc/Si MXMs at least by 20 % at wavelength of 46.9 nm. |
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