Authors | M.R. Panasiuk1, B.I. Turko2, L.R. Toporovska2, V.B. Kapustianyk1,2, M.S. Rudko1 |
Affiliations |
1 Scientific-Technical and Educational Center of Low Temperature Studies, 50, Dragomanova Str., 79005 Lviv, Ukraine 2 Ivan Franko National University of Lviv, 50, Dragomanova Str., 79005 Lviv, Ukraine |
Е-mail | tyrko_borys@ukr.net |
Issue | Volume 9, Year 2017, Number 2 |
Dates | Received 30 January 2017; revised manuscript received 26 April 2017; published online 28 April 2017 |
Citation | M.R. Panasiuk, B.I. Turko, L.R. Toporovska, et al., J. Nano- Electron. Phys. 9 No 2, 02018 (2017) |
DOI | 10.21272/jnep.9(2).02018 |
PACS Number(s) | 78.55. – m, 78.55.Et, 78.60.Kn |
Keywords | Zinc oxide (10) , Nanostructures (8) , Thermally stimulated luminescence, Photoluminescence (17) , Proper defects. |
Annotation | Investigations of the thermally stimulated luminescence of zinc oxide nanowires grown from a vapor phase were performed in the temperature range 295-480 K. The basic parameters of the trapping centers, such as the ionization energy of the traps, the capture cross section of the charge carriers traps and the frequency factor, were determined. The calculated values were found to be 0.320.03 еV, 6·10 – 18cm 2 and 1.9·106 s – 1, respectively. It was concluded that the green band in ZnO can be related to the electronic transitions from donor levels Zni to the acceptor levels VZn. |
List of References English version of article |