The Interface Separation Boundary Influence on the Metal-Semiconductor Barrier Transitions Parameters

Authors V.S. Dmitriev

Zaporizhzhya State Engineering Academy, 226, Soborny Ave., 69006 Zaporizhzhya, Ukraine

Issue Volume 9, Year 2017, Number 1
Dates Received 25 May 2016; revised manuscript received 07 February 2017; published online 20 February 2017
Citation V.S. Dmitriev, J. Nano- Electron. Phys. 9 No 1, 01016 (2017)
DOI 10.21272/jnep.9(1).01016
PACS Number(s) 73.20. – r, 85.40.Sz, 85.30.Hi
Keywords Gallium arsenide, Silver (13) , Schottky Barrier (8) , Contact region, Annealing (16) , Transition layer, Structure (104) .
Annotation The methods for manufacturing devices with Schottky barrier should provide the required structure of the interface and the ability to produce high-quality "metal-semiconductor" layers over a large area. It is of interest the separation boundary structure control of the contact between a metal and a semiconductor, which is achieved by thin-film structures annealing. The contacts to epitaxial n-type GaAs layer (111) a few micrometers thick with a carriers mobility of more than 5000 cm2/(Vs) and the electrons concentration ne.l.  21016 cm – 3,that was grown on highly doped substrates (n ~ 1018 cm-3) are investigated. The deposition of silver was produced on the GaAs-substrate by vacuum deposition at a residual pressure of about 2,6610 – 3 Pa. Produced structures Ag/n-GaAs were annealed in the 723...873 K temperature range. The optimum depth of silver penetration into gallium arsenide contact region is found at an annealing temperature of 823 K during 10 min., φBn  0,95 V. The structure of contacts metal films is polycrystalline, fine-grained, in composition it mostly corresponds to sprayed material.

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