Analog Behavioral Modeling of Schottky Diode Using Spice
| Authors | Messaadi Lotfi1, Dibi Zohir2 |
| Affiliations | 1 University of Batna, Advanced Electronic Laboratory (LEA), Avenue Mohamed El-Hadi Boukhlouf, 05000, Batna, Algeria 2 University of Batna, Advanced Electronic Laboratory (LEA), Avenue Mohamed El-Hadi Boukhlouf, 05000, Batna, Algeria |
| Е-mail | lotfi.messaadi@gmail.com |
| Issue | Volume 9, Year 2017, Number 1 |
| Dates | Received 17 December 2016; revised manuscript received 08 February 2017; published online 20 February 2017 |
| Citation | Messaadi Lotfi, Dibi Zohir, J. Nano- Electron. Phys. 9 No 1, 01002 (2017) |
| DOI | 10.21272/jnep.9(1).01002 |
| PACS Number(s) | 73.30. + y, 85.30.Hi |
| Keywords | Silicon carbide (9) , Reverse recovery (3) , Schottky diode (10) , Temperature effect, Modeling (20) , pspice (5) , ABM, Characterization (6) . |
| Annotation | This paper presents a SiC Schottky diode model including static and dynamic features implemented as a parameterized block constructed from SPICE Analog Behavioral Modeling (ABM) controlled sources. The parameters for this block are easy to extract, even from readily available diode data sheet information. This model can easily simulate the diode’s reverse recovery and power losses behavior over all temperatures from 0 °C to 175 °C. |
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