Sulfide Passivation of Indium Phosphide Porous Surfaces
| Authors | Y.O. Suchikova |
| Affiliations | Berdyansk State Pedagogical University, 4, Schmidt st., 71100 Berdyansk, Ukraine |
| Е-mail | yanasuchikova@mail.ru |
| Issue | Volume 9, Year 2017, Number 1 |
| Dates | Received 02 November 2016; published online 20 February 2017 |
| Citation | Y.O. Suchikova, J. Nano- Electron. Phys. 9 No 1, 01006 (2017) |
| DOI | 10.21272/jnep.9(1).01006 |
| PACS Number(s) | 61.43Gt, 78.30Fs, 78.55m |
| Keywords | Porous indium phosphide, Passivation, Chalcogenides (2) , Photoluminescence (17) , Sulfate solution, Oxides (5) . |
| Annotation | The paper describes the effect of the chemical treatment of porous indium phosphide in sulfide solutions on the photoluminescence spectrum. It was shown that the surface sulfiding samples leads to a state of inertia with respect to oxygen. It is found that the thin crystal film is formed of a chemically inert material during chalcogenide passivation por-InP removes oxide layer instead. |
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List of References English version of article |
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