Characterization of the Microstructural and Mechanical Properties of MoZrN Coating
| Authors | Abdelaziz Abboudi1, 21, Brahim Chermime1, 2 , Hamid Djebaili2, 3 , Mourad Brioua1 |
| Affiliations | 1 Department of mechanic, University Hadj Lakhdar, Batna 05000, Algeria 2 Laboratoire des Sciences, Universite Abbes Laghrour, 40000 Khenchela, Algeria 3 Department of mechanic, University Abbas Laghrour, 40000 Khenchela, Algeria |
| Е-mail | abboudiabdalaziz@yahoo.fr |
| Issue | Volume 9, Year 2017, Number 1 |
| Dates | Received 23 December 2016; revised manuscript received 07 January 2017; published online 20 February 2017 |
| Citation | Abdelaziz Abboudi, Brahim Chermime, Hamid Djebaili, Mourad Brioua, J. Nano- Electron. Phys. 9 No 1, 01014 (2017) |
| DOI | 10.21272/jnep.9(1).01014 |
| PACS Number(s) | 1.72. – y, 62.20.D – |
| Keywords | Microstructure (21) , The thickness, PVD coatings, Morphology (8) . |
| Annotation | The aim of this paper is evaluation of properties of samples with The ternary nitride (Mo,Zr)N thin films were grown on silicon and steel XC100 substrates by the reactive RF magnetron sputtering technique. The substrates were exposed to ion bombardmen coating, which was deposited on two types of substrates. Silicon was made by melt technology, this method belongs to PVD (Physical Vapour deposition) process. Thin PVD coatings deposited onto surface of tools and machine parts are widely used in a range of sectors, for example in machine engineering. These materials, wear resistance and thermal and chemical stability of the surface. Structure, chemical composition a properties of thin layers depend on technological parameters of the PVD process and preparation of steel substrate. High requirements on the quality of thin PVD coatings resulted in development of methods used to evaluate of their properties. The theckness is one of the important characteristics of mechanical properties of the coated parts. The surface morphology, microstructure, and composition were studied by atomic force microscopy (AFM) nanoindentation, scanning electron microscopy (SEM) and X-ray diffractometer. |
|
List of References |
Other articles from this number
1) Effect of π Orbital on I/V Characteristics and Transmission in Molecular Diode Structures with Au Contacts [01001-1-01001-5]2) Analog Behavioral Modeling of Schottky Diode Using Spice [01002-1-01002-4]
3) Structure and Optical-Lumenescent Characteristics of Mg1 – xZnxGa2O4: Mn2+ Ceramics [01003-1-01003-6]
4) Thermal Modeling of an Integrated Circular Inductor [01004-1-01004-5]
5) Polyhedral Model of Carbon Nanotubes Analytically Describing their Geometry [01005-1-01005-6]
6) Sulfide Passivation of Indium Phosphide Porous Surfaces [01006-1-01006-4]
7) Effect of the Growth Conditions of Cadmium Telluride Crystals with OverstoichiometricCadmium on their Electro-Physical Properties [01007-1-01007-5]
8) Effect of Severe Plastic Deformation on Shape Memory and Mechanical Properties of Nanostructured Cu-Zn-Al Alloy [01008-1-01008-6]
9) Density Functional Study on Structural Stability and Electronic Properties of Neutral, Anionic and Cationic MgSe Nanostructures [01009-1-01009-6]
10) Determining the Critical Parameters of the Electron Beam with Surface Melting of the Optical Elements of Precision Instrumentation [01010-1-01010-5]
11) Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique [01011-1-01011-5]
12) Design of Novel Efficient Multiplexer Architecture for Quantum-dot Cellular Automata [01012-1-01012-7]
13) Metrological Guarantee of Flashing Light Measurements [01013-1-01013-5]
14) Investigation of the Temperature Field of Coolant in the Installations for Obtaining 3D Nanostructured Porous Surface Layer on the Granules of Ammonium Nitrate [01015-1-01015-4]
15) The Interface Separation Boundary Influence on the Metal-Semiconductor Barrier Transitions Parameters [01016-1-01016-4]
16) Surface Plasmons in Carbon Nanotubes with Elliptical Cross Section [01017-1-01017-4]
17) Magnetoresistance of Modified Carbon Nanotubes [01018-1-01018-7]
18) Thermodynamic Properties of Monocrystals of Silicon Doped Boron Impurity [01019-1-01019-4]
19) Effect of Uniaxial Pressure on the 2-Conductivity of Heavily Doped p-Si(B) [01020-1-01020-5]
20) A Processing in Memory Realization Using Quantum Dot Cellular Automata (QCA): Proposal and Implementation [01021-1-01021-5]
21) Design Device for Subthreshold Slope in DG Fully Depleted SOI MOSFET [01022-1-01022-4]
22) Memristor Effect in Ni/TiOx/p-Si/Ni and Ni/TiOx/p-Si/TiOx/Ni Heterojunctions [01023-1-01023-3]
23) DFT Study of Intrinsic and Induced p-type Conductivity of ZnO Material [01024-1-01024-6]
24) Resistive Switching Properties of Highly Transparent SnO2:Fe [01025-1-01025-5]
25) Role of the Temperature Dependence of Elastic Modulus in the Basic Characteristics of Giant Magnetically Induced Deformation of Ferromagnetic Martensite [01026-1-01026-3]
26) Hydroxyl Properties of Hydrogenated Germanosilicate Optical Fiber Due to Thermal Treatment and Ultraviolet Irradiation [01027-1-01027-4]
27) Structural and Optical Properties of Cu2ZnSnS4 Films Obtained by Pulsed Spray Pyrolysis [01028-1-01028-7]
28) Some Aspect of Modern Nanotechnology and Lazer Radiation in Cancer Treament [01029-1-01029-2]
29) Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor [01030-1-01030-4]
30) Structure and Mechanical Properties of Hafnium Doped with Yttrium Oxide [01031-1-01031-5]
31) Structure and Physics Mechanical Properties of Multiperiod Vacuum-arc Coatings on the Basis of Two-layer System TiNx/ZrNx [01032-1-01032-6]
32) Structure and Properties of Vacuum Arc Single-Layer and Multiperiod Two-Layer Nitride Coatings Based on Ti(Al):Si Layers [01033-1-01033-6]
