Design Device for Subthreshold Slope in DG Fully Depleted SOI MOSFET
| Authors | Neha Goel1 , Manoj Kumar Pandey2 |
| Affiliations | 1 Research Scholar, SRM University NCR Campus Ghaziabad, India 2 Department of ECE, SRM University NCR Campus Ghaziabad, India |
| Е-mail | 17nehagoel@gmail.com, mkspandey@gmail.com |
| Issue | Volume 9, Year 2017, Number 1 |
| Dates | Received 24 October 2016; revised manuscript received 07 February 2017; published online 20 February 2017 |
| Citation | Neha Goel, Manoj Kumar Pandey, J. Nano- Electron. Phys. 9 No 1, 01022 (2017) |
| DOI | 10.21272/jnep.9(1).01022 |
| PACS Number(s) | 85.30.De |
| Keywords | Fully depleted silicon on insulator (FDSOI) (2) , Threshold voltage (15) , Sub threshold slope. |
| Annotation | In this paper, we discuss how a short channel effects can be suppressed and how a threshold voltage fluctuation can be minimized and better control of subthreshold slope by the impact of the back gate bias and control of gate work function of a fully depleted SOI (Silicon-On-Insulator) MOSFET. The fluctuation in the threshold voltage and subthreshold slope are due to short channel effects. The Back gate voltage plays a significant role on the threshold voltage and thin buried oxide is used to suppress the short-channel effects and is used to keep a low value of the subthreshold slope are described in this paper. It is shown that how short channel effects can be suppressed in order to improve subthreshold slope. |
|
List of References |
Other articles from this number
1) Effect of π Orbital on I/V Characteristics and Transmission in Molecular Diode Structures with Au Contacts [01001-1-01001-5]2) Analog Behavioral Modeling of Schottky Diode Using Spice [01002-1-01002-4]
3) Structure and Optical-Lumenescent Characteristics of Mg1 – xZnxGa2O4: Mn2+ Ceramics [01003-1-01003-6]
4) Thermal Modeling of an Integrated Circular Inductor [01004-1-01004-5]
5) Polyhedral Model of Carbon Nanotubes Analytically Describing their Geometry [01005-1-01005-6]
6) Sulfide Passivation of Indium Phosphide Porous Surfaces [01006-1-01006-4]
7) Effect of the Growth Conditions of Cadmium Telluride Crystals with OverstoichiometricCadmium on their Electro-Physical Properties [01007-1-01007-5]
8) Effect of Severe Plastic Deformation on Shape Memory and Mechanical Properties of Nanostructured Cu-Zn-Al Alloy [01008-1-01008-6]
9) Density Functional Study on Structural Stability and Electronic Properties of Neutral, Anionic and Cationic MgSe Nanostructures [01009-1-01009-6]
10) Determining the Critical Parameters of the Electron Beam with Surface Melting of the Optical Elements of Precision Instrumentation [01010-1-01010-5]
11) Optical Properties of Pure and Eu Doped ZnSe Films Deposited by CSVS Technique [01011-1-01011-5]
12) Design of Novel Efficient Multiplexer Architecture for Quantum-dot Cellular Automata [01012-1-01012-7]
13) Metrological Guarantee of Flashing Light Measurements [01013-1-01013-5]
14) Characterization of the Microstructural and Mechanical Properties of MoZrN Coating [01014-1-01014-4]
15) Investigation of the Temperature Field of Coolant in the Installations for Obtaining 3D Nanostructured Porous Surface Layer on the Granules of Ammonium Nitrate [01015-1-01015-4]
16) The Interface Separation Boundary Influence on the Metal-Semiconductor Barrier Transitions Parameters [01016-1-01016-4]
17) Surface Plasmons in Carbon Nanotubes with Elliptical Cross Section [01017-1-01017-4]
18) Magnetoresistance of Modified Carbon Nanotubes [01018-1-01018-7]
19) Thermodynamic Properties of Monocrystals of Silicon Doped Boron Impurity [01019-1-01019-4]
20) Effect of Uniaxial Pressure on the 2-Conductivity of Heavily Doped p-Si(B) [01020-1-01020-5]
21) A Processing in Memory Realization Using Quantum Dot Cellular Automata (QCA): Proposal and Implementation [01021-1-01021-5]
22) Memristor Effect in Ni/TiOx/p-Si/Ni and Ni/TiOx/p-Si/TiOx/Ni Heterojunctions [01023-1-01023-3]
23) DFT Study of Intrinsic and Induced p-type Conductivity of ZnO Material [01024-1-01024-6]
24) Resistive Switching Properties of Highly Transparent SnO2:Fe [01025-1-01025-5]
25) Role of the Temperature Dependence of Elastic Modulus in the Basic Characteristics of Giant Magnetically Induced Deformation of Ferromagnetic Martensite [01026-1-01026-3]
26) Hydroxyl Properties of Hydrogenated Germanosilicate Optical Fiber Due to Thermal Treatment and Ultraviolet Irradiation [01027-1-01027-4]
27) Structural and Optical Properties of Cu2ZnSnS4 Films Obtained by Pulsed Spray Pyrolysis [01028-1-01028-7]
28) Some Aspect of Modern Nanotechnology and Lazer Radiation in Cancer Treament [01029-1-01029-2]
29) Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor [01030-1-01030-4]
30) Structure and Mechanical Properties of Hafnium Doped with Yttrium Oxide [01031-1-01031-5]
31) Structure and Physics Mechanical Properties of Multiperiod Vacuum-arc Coatings on the Basis of Two-layer System TiNx/ZrNx [01032-1-01032-6]
32) Structure and Properties of Vacuum Arc Single-Layer and Multiperiod Two-Layer Nitride Coatings Based on Ti(Al):Si Layers [01033-1-01033-6]
