Results (29):

Title Effects of Interfacial Charges on Doped and Undoped HfOx Stack Layer with Tin Metal Gate Electrode for Nano-Scaled CMOS Generation
Authors S. Chatterjee, Y. Kuo
Issue Volume 3, Year 2011, Number 1, Part 1
Pages 0162 - 0169
Title Effect of Grain Size on the Threshold Voltage for Double-Gate Polycrystaline Silicon MOSFET
Authors Mahesh Chandra, Alka Panwar, B.P. Tyag
Issue Volume 3, Year 2011, Number 1, Part 3
Pages 0474 - 0478
Title Two Dimensional Analytical Modeling for SOI and SON MOSFET and Their Performance Comparison
Authors Saptarsi Ghosh, Khomdram Jolson Singh, Sanjay Deb, Subir Kumar Sarkar
Issue Volume 3, Year 2011, Number 1, Part 3
Pages 0569 - 0575
Title Two-Dimensional Analytical Modeling of Threshold Voltage of Doped Short-Channel Triple-Material Double-Gate (Tm-Dg) MOSFET's
Authors Sarvesh Dubey, Dheeraj Gupta, Pramod Kumar Tiwari, S. Jit
Issue Volume 3, Year 2011, Number 1, Part 3
Pages 0576 - 0583
Title Strategic Review of Arsenide, Phosphide and Nitride MOSFETs
Authors Gourab Dutta, Palash Das, Partha Mukherjee, Dhrubes Biswas
Issue Volume 3, Year 2011, Number 1, Part 4
Pages 0728 - 0740
Title Electrostatics of Silicon Nano Transistor
Authors Lalit Singh, B.P. Tyag
Issue Volume 3, Year 2011, Number 1, Part 4
Pages 0808 - 0813
Title A 2-D Analytical Threshold Voltage Model for Symmetric Double Gate MOSFET's Using Green’s Function
Authors Anoop Garg, S.N. Sinha, R.P. Agarwal
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 0894 - 0902
Title Role of Interface Charges on High-k Based Poly-Si and Metal Gate Nano-Scale MOSFETs
Authors N. Shashank, Vikram Singh, W.R. Taube, R.K. Nahar
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 0937 - 0941
Title A Doping Dependent Threshold Voltage Model of Uniformly Doped Short-Channel Symmetric Double-Gate (DG) MOSFET’s
Authors P.K. Tiwari, S. Dubey, S. Jit
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 0963 - 0971
Title Effect of Drift Region Doping and Coulmn Thickness Variations in a Super Junction Power MOSFET: a 2-D Simulation Study
Authors Deepti Sharma, Rakesh Vaid
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 1112 - 1119
Title Channel Length Effect on Subthreshold Characteristics of Junctionless Trial Material Cylindrical Surrounding-Gate MOSFETs with High-k Gate Dielectrics
Authors Fairouz Lagraf,, Djamil Rechem, Kamel Guergouri, Mourad Zaabat
Issue Volume 4, Year 2012, Number 1
Pages 02011-1 - 02011-5
Title Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials
Authors Rakesh Prasher, Devi Dass, Rakesh Vaid
Issue Volume 5, Year 2013, Number 1
Pages 01017-1 - 01017-5
Title Comparison of Atomic Level Simulation Studies of MOSFETs Containing Silica and Lantana Nanooxide Layers
Authors K. Bikshalu, M.V. Manasa, V.S.K. Reddy, P.C.S. Reddy, K. Venkateswara Rao
Issue Volume 5, Year 2013, Number 4
Pages 04058-1 - 04058-3
Title Analysis of Voltage Transfer Characteristics of Nano-scale SOI CMOS Inverter with Variable Channel Length and Doping Concentration
Authors A. Daniyel Raj, C. Rajarajachozhan, Sanjoy Deb
Issue Volume 7, Year 2015, Number 1
Pages 01004-1 - 01004-4
Title An Analytical Universal Model for Symmetric Double Gate Junctionless Transistors
Authors N. Bora, P. Das, R. Subadar
Issue Volume 8, Year 2016, Number 2
Pages 02003-1 - 02003-4
Title Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor
Authors Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza
Issue Volume 8, Year 2016, Number 4
Pages 04037-1 - 04037-4
Title Comparative Analysis of CNTFET and CMOS Logic based Arithmetic Logic Unit
Authors K. Nehru, T. Nagarjuna, , G. Vijay,
Issue Volume 9, Year 2017, Number 4
Pages 04018-1 - 04018-4
Title Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder
Authors S. Rashid, S. Khan, A. Singh,
Issue Volume 9, Year 2017, Number 5
Pages 05003-1 - 05003-4
Title Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs
Authors Nitin Sachdeva, Munish Vashishath, P.K. Bansal
Issue Volume 9, Year 2017, Number 6
Pages 06009-1 - 06009-4
Title A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs
Authors M. Djerioui, M. Hebali, D. Chalabi, A. Saidane
Issue Volume 10, Year 2018, Number 4
Pages 04027-1 - 04027-4
Title An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET
Authors Arjimand Ashraf, Prashant Mani
Issue Volume 10, Year 2018, Number 4
Pages 04012-1 - 04012-5
Title A New Electro-Thermal Modeling of Low Voltage Power MOSFET with Junction Tempera-ture Dependent Foster (RC) Thermal Network
Authors Smail Toufik, Dibi Zohir
Issue Volume 10, Year 2018, Number 4
Pages 04017-1 - 04017-5
Title Charge Based Quantization Model for Triple-Gate FINFETS
Authors P. Vimala
Issue Volume 10, Year 2018, Number 5
Pages 05015-1 - 05015-5
Title PSpice Implementation and Simulation of a New Electro-Thermal Modeling for Estimating the Junction Temperature of Low Voltage Power MOSFET
Authors Toufik Smail, Zohir Dibi, Douadi Bendib
Issue Volume 10, Year 2018, Number 6
Pages 06004-1 - 06004-5
Title Channel Length Effect on Subthreshold Characteristics of Junctionless Trial Material Cylindrical Surrounding-Gate MOSFETs with High-k Gate Dielectrics
Authors Fairouz Lagraf,, Djamil Rechem,, Kamel Guergouri,, Mourad Zaabat,
Issue Volume 11, Year 2019, Number 2
Pages 02011-1 - 02011-5
Title Single Electron Transistor Based Current Mirror: Modelling and Performance Characterization
Authors Ashok.D. Vidhate, Shruti Suman
Issue Volume 13, Year 2021, Number 1
Pages 01017-1 - 01017-5
Title Modeling and Simulation of MOSFET (High-k Dielectric) Using Genetic Algorithms
Authors Abdelkrim Mostefai, Smail Berrah, Hamza Abid
Issue Volume 13, Year 2021, Number 6
Pages 06004-1 - 06004-5
Title Performance Analysis of Gate All Around (GAA) MOSFET at Cryogenic Temperature for the Sub-Nanometer Regime
Authors M. Lakshmana Kumar, Biswajit Jena
Issue Volume 13, Year 2021, Number 6
Pages 06034-1 - 06034-4
Title Impact of Device Sizing on Electrical Properties of DG-SOI-MOSFET Using Octave Software
Authors M. Djerioui, M. Hebali, M. Abboun Abid
Issue Volume 14, Year 2022, Number 5
Pages 05025-1 - 05025-4