| Title |
Effect of Grain Size on the Threshold Voltage for Double-Gate Polycrystaline Silicon MOSFET |
| Authors |
Mahesh Chandra, Alka Panwar, B.P. Tyag |
| Issue |
Volume 3, Year 2011, Number 1, Part 3 |
| Pages |
0474 - 0478 |
| Title |
Two Dimensional Analytical Modeling for SOI and SON MOSFET and Their Performance Comparison |
| Authors |
Saptarsi Ghosh, Khomdram Jolson Singh, Sanjay Deb, Subir Kumar Sarkar |
| Issue |
Volume 3, Year 2011, Number 1, Part 3 |
| Pages |
0569 - 0575 |
| Title |
Two-Dimensional Analytical Modeling of Threshold Voltage of Doped Short-Channel Triple-Material Double-Gate (Tm-Dg) MOSFET's |
| Authors |
Sarvesh Dubey, Dheeraj Gupta, Pramod Kumar Tiwari, S. Jit |
| Issue |
Volume 3, Year 2011, Number 1, Part 3 |
| Pages |
0576 - 0583 |
| Title |
Strategic Review of Arsenide, Phosphide and Nitride MOSFETs |
| Authors |
Gourab Dutta, Palash Das, Partha Mukherjee, Dhrubes Biswas |
| Issue |
Volume 3, Year 2011, Number 1, Part 4 |
| Pages |
0728 - 0740 |
| Title |
Electrostatics of Silicon Nano Transistor |
| Authors |
Lalit Singh, B.P. Tyag |
| Issue |
Volume 3, Year 2011, Number 1, Part 4 |
| Pages |
0808 - 0813 |
| Title |
A 2-D Analytical Threshold Voltage Model for Symmetric Double Gate MOSFET's Using Green’s Function |
| Authors |
Anoop Garg, S.N. Sinha, R.P. Agarwal |
| Issue |
Volume 3, Year 2011, Number 1, Part 5 |
| Pages |
0894 - 0902 |
| Title |
Role of Interface Charges on High-k Based Poly-Si and Metal Gate Nano-Scale MOSFETs |
| Authors |
N. Shashank, Vikram Singh, W.R. Taube, R.K. Nahar |
| Issue |
Volume 3, Year 2011, Number 1, Part 5 |
| Pages |
0937 - 0941 |
| Title |
Performance of a Double Gate Nanoscale MOSFET (DG-MOSFET) Based on Novel Channel Materials |
| Authors |
Rakesh Prasher, Devi Dass, Rakesh Vaid |
| Issue |
Volume 5, Year 2013, Number 1 |
| Pages |
01017-1 - 01017-5 |
| Title |
Comparison of Atomic Level Simulation Studies of MOSFETs Containing Silica and Lantana Nanooxide Layers |
| Authors |
K. Bikshalu, M.V. Manasa, V.S.K. Reddy, P.C.S. Reddy, K. Venkateswara Rao |
| Issue |
Volume 5, Year 2013, Number 4 |
| Pages |
04058-1 - 04058-3 |
| Title |
An Analytical Universal Model for Symmetric Double Gate Junctionless Transistors |
| Authors |
N. Bora, P. Das, R. Subadar |
| Issue |
Volume 8, Year 2016, Number 2 |
| Pages |
02003-1 - 02003-4 |
| Title |
Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor |
| Authors |
Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza |
| Issue |
Volume 8, Year 2016, Number 4 |
| Pages |
04037-1 - 04037-4 |
| Title |
Comparative Analysis of CNTFET and CMOS Logic based Arithmetic Logic Unit |
| Authors |
K. Nehru, T. Nagarjuna, , G. Vijay, |
| Issue |
Volume 9, Year 2017, Number 4 |
| Pages |
04018-1 - 04018-4 |
| Title |
Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder |
| Authors |
S. Rashid, S. Khan, A. Singh, |
| Issue |
Volume 9, Year 2017, Number 5 |
| Pages |
05003-1 - 05003-4 |
| Title |
Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs |
| Authors |
Nitin Sachdeva, Munish Vashishath, P.K. Bansal |
| Issue |
Volume 9, Year 2017, Number 6 |
| Pages |
06009-1 - 06009-4 |
| Title |
A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs |
| Authors |
M. Djerioui, M. Hebali, D. Chalabi, A. Saidane |
| Issue |
Volume 10, Year 2018, Number 4 |
| Pages |
04027-1 - 04027-4 |
| Title |
An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET |
| Authors |
Arjimand Ashraf, Prashant Mani |
| Issue |
Volume 10, Year 2018, Number 4 |
| Pages |
04012-1 - 04012-5 |
| Title |
Charge Based Quantization Model for Triple-Gate FINFETS |
| Authors |
P. Vimala |
| Issue |
Volume 10, Year 2018, Number 5 |
| Pages |
05015-1 - 05015-5 |
| Title |
Single Electron Transistor Based Current Mirror: Modelling and Performance Characterization |
| Authors |
Ashok.D. Vidhate, Shruti Suman |
| Issue |
Volume 13, Year 2021, Number 1 |
| Pages |
01017-1 - 01017-5 |
| Title |
Modeling and Simulation of MOSFET (High-k Dielectric) Using Genetic Algorithms |
| Authors |
Abdelkrim Mostefai, Smail Berrah, Hamza Abid |
| Issue |
Volume 13, Year 2021, Number 6 |
| Pages |
06004-1 - 06004-5 |
| Title |
Performance Analysis of Gate All Around (GAA) MOSFET at Cryogenic Temperature for the Sub-Nanometer Regime |
| Authors |
M. Lakshmana Kumar, Biswajit Jena |
| Issue |
Volume 13, Year 2021, Number 6 |
| Pages |
06034-1 - 06034-4 |
| Title |
Impact of Device Sizing on Electrical Properties of DG-SOI-MOSFET Using Octave Software |
| Authors |
M. Djerioui, M. Hebali, M. Abboun Abid |
| Issue |
Volume 14, Year 2022, Number 5 |
| Pages |
05025-1 - 05025-4 |
| Title |
Performance Enhancement of the Urdhva-Tiryagbhyam based Vedic Multiplier using FinFET |
| Authors |
P. Vimala, Soumya G. Hosmani |
| Issue |
Volume 16, Year 2024, Number 2 |
| Pages |
02002-1 - 02002-5 |
| Title |
Measurement of Very Small Variation of Effective Resistance of MOSFET Deputed in Active Microgrid Inverter Operation |
| Authors |
S.S. Ghosh, S. Chattopadhyay, R.V.V. Krishna, Ranjan Kumar Mahapatra, A. Das, Sudipta Das |
| Issue |
Volume 16, Year 2024, Number 3 |
| Pages |
03029-1 - 03029-5 |
