Автори | B. Lakehal1 , A. Dendouga2 |
Афіліація |
1Department of Electronics, University of Kasdi Merbah Ouargla, Ouargla 30000 Algeria 2Laboratory of Advanced Electronic University of Batna2, 05000 Algeria |
Е-mail | lakehalbra@gmail.com |
Випуск | Том 10, Рік 2018, Номер 6 |
Дати | Одержано 18.06.2018; у відредагованій формі 01.12.2018; опубліковано online 18.12.2018 |
Цитування | B. Lakehal, A. Dendouga, J. Nano- Electron. Phys. 10 No 6, 06046 (2018) |
DOI | https://doi.org/10.21272/jnep.10(6).06046 |
PACS Number(s) | 85.55.De, 84.60.Jt |
Ключові слова | Schottky-barrier height, Genetic algorithm (5) , Ideality factor (10) , Fill factor (2) . |
Анотація |
This paper proposes a new method based on a genetic algorithm (GA) approach to optimize the electrical parameters such as height barrier, ideality factor, fill factor, open-circuit voltage and power conversion efficiency, in order to improve the electrical performance of Schottky solar cells in an over wide range of temperature. Thus the parameters research process called objective function is used to find the optimal electrical parameters providing greater conversion efficiency. The proposed model results are also compared to experimental and analytical I-V data, where a good agreement has been found between them. Therefore, this approach may provide a theoretical basis and physical insights for Schottky solar cells. |
Перелік посилань |