Electronics Properties of Monoclinic HfO2

Автори Abdelkrim Mostefai1 , Smail Berrah2 , Hamza Abid1
Приналежність

1Applied Materials Laboratory, University of Sidi Bel Abbes, 22000- Sidi Bel Abbes, Algeria

2LMER Laboratory, University of A/ Mira of Bejaia, Algeria

Е-mail mostakrimo@yahoo.fr
Випуск Том 10, Рік 2018, Номер 6
Дати Одержано 04.12.2017; у відредагованій формі 04.12.2018; опубліковано online 18.12.2018
Посилання Abdelkrim Mostefai, Smail Berrah, Hamza Abid, J. Nano- Electron. Phys. 10 No 6, 06026 (2018)
DOI https://doi.org/10.21272/jnep.10(6).06026
PACS Number(s) 71.15.Ap, 71.15.Mb
Ключові слова SiO2 (9) , HfO2 (3) , DFT (34) , Aproximation LDA, Approximation GGA, ADF-BAND (3) , Pseudo-potential (PP), Atomic orbitals (AO), Slater type orbitals (STO).
Анотація

Density functional theory (DFT) is a very successful technique to calculating the properties of many-electron systems from first principles. The bands structures, charge density and density of state (DOS) of monoclinic HfO2 are calculated using Pseudo potential (PP) and Atomic Orbitals (AO) method, within the density functional theory DFT, generalized gradient approximation GGA and local density approximation LDA. Hafnium oxide (HfO2) is a high-k dielectric (dielectric constant k ~ 25 at 300 K, band gap Eg ≈ 6 eV); thermally stable up to 700 (C. HfO2 is used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric.

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