Study of ZnO–SnO2 Thin Film Growth Processes

Автори A.Kh. Abduev, A.Sh. Asvarov, A.K. Akhmedov
Приналежність

Institute of Physics, Dagestan Scientific Center of the RAS, 94, Yaragskiy Str., 367003 Makhachkala, Russia

Е-mail cht-if-ran@mail.ru
Випуск Том 10, Рік 2018, Номер 6
Дати Одержано 02.08.2018; у відредагованій формі – 30.11.2018; опубліковано online 18.12.2018
Посилання A.Kh. Abduev, A.Sh. Asvarov, A.K. Akhmedov, J. Nano- Electron. Phys. 10 No 6, 06020 (2018)
DOI https://doi.org/10.21272/jnep.10(6).06020
PACS Number(s) 81.15.Cd, 68.55.ag
Ключові слова ZnO (88) , SnO2 (11) , Thin film (101) , Magnetron sputtering (14) , Stoichiometry (2) .
Анотація

The processes of magnetron synthesis of ZnO–SnO2-based films by the magnetron sputtering of metal (Zn–Sn), ceramic (ZnO–SnO2) and composite (ZnO–SnO2 + 10wt.% Zn–Sn) targets were studied. It is shown that during magnetron sputtering of the metal and composite targets a multy-layered structure can be formed due to periodic changes in the composition of the sputtered target surface in the erosion zone.

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