Basic Principles of Betavoltaic Elements and Prospects of their Development
| Автори | A.A. Davydov, Ye.N. Fyodorov, D.S. Kiselev, A.V. Popkova |
| Приналежність | Federal State Unitarian Enterprise “Scientific Industrial Association Scientific Research Institute “LUCH”, 24, Zheleznodorozhnaya st., 142100 Podolsk, Moscow Region, Russia |
| Е-mail | |
| Випуск | Том 8, Рік 2016, Номер 3 |
| Дати | Одержано 04.05.2016, опубліковано online - 03.10.2016 |
| Посилання | A.A. Davydov, Ye.N. Fyodorov, D.S. Kiselev, A.V. Popkova, J. Nano- Electron. Phys. 8 No 3, 03049 (2016) |
| DOI | 10.21272/jnep.8(3).03049 |
| PACS Number(s) | 73.30. + y, 73.40. – c |
| Ключові слова | Direct conversion of nuclear energy into electrical energy, Radionuclide, Nickel-63, Schottky barrier (8) , Rectifying heterostructure. |
| Анотація | The basic technical principles and means of increase in betavoltaitic elements effectiveness have been analyzed by comparing with their closest analogue – photoelectric semiconductor converters. The geometric parameters of radiation sources for these elements and their capacities have been estimated. It is shown the radiation source 63Ni foil thickness should not exceed a few micrometers, and maximum energy conversion efficiency can achieve ~ 16 %. |
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