Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films
| Автори | P.D. Rybalko1, M.V. Khenkin1 , P.A. Forsh1,2 , R. Drevinskas3, A.N. Matsukatova1, P. Kazansky3, A.G. Kazanskii1 |
| Приналежність | 1 Lomonosov Moscow State University, Faculty of Physics, 119991 Moscow, Russia 2 National Research Centre “Kurchatov Institute”, 123182 Moscow, Russia 3 Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, UK |
| Е-mail | forsh@phys.msu.ru |
| Випуск | Том 8, Рік 2016, Номер 3 |
| Дати | Одержано 18.06.2016, опубліковано online - 03.10.2016 |
| Посилання | P.D. Rybalko, M.V. Khenkin, P.A. Forsh, et al., J. Nano- Electron. Phys. 8 No 3, 03038 (2016) |
| DOI | 10.21272/jnep.8(3).03038 |
| PACS Number(s) | 71.23.Cq, 72.80.Nq, 73.61.Jc |
| Ключові слова | Semiconductors (25) , Thin films (60) , Amorphous hydrogenated silicon (2) , Femtosecond laser crystallization, Raman spectra (6) , Conductivity (43) . |
| Анотація | Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film. |
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