| Автори | Said Benramache1 , Boubaker Benhaoua2 |
| Афіліація | 1 Material Sciences Department, Faculty of Science, University of Biskra, Biskra 070000, Algeria 2 VTRS Laboratory, Institute of Technology, University of El-Oued, El-Oued 39000, Algeria |
| Е-mail | saidbenramache07@gmail.com |
| Випуск | Том 8, Рік 2016, Номер 3 |
| Дати | Одержано 12.04.2016, опубліковано online - 03.10.2016 |
| Цитування | Said Benramache, Boubaker Benhaoua, J. Nano- Electron. Phys. 8 No 3, 03014 (2016) |
| DOI | 10.21272/jnep.8(3).03014 |
| PACS Number(s) | 77.55.hf, 81.20.Fw |
| Ключові слова | ZnO (96) , Thin film (101) , Precursor molarity, Sol-Gel technique. |
| Анотація | We investigated the structural and optical properties of zinc oxide (ZnO) thin film as the n-type semiconductor. In this work, the sol–gel method used to fabricate ZnO thin film on glass substrate at different solution molarities of 0.1, 0.3 and 0.5 mol/l of zinc acetate dehydrate. The DRX analyses indicated that the coated ZnO films exhibit an hexagonal structure wurtzite and (002) oriented with the maximum value of crystallite size G 69.32 nm is measured wi 0.5 mol/l. The thin film exhibit an average optical transparency is over 80 % at high molarity, in the visible region, found that the optical band gap energy was increased up to 3.25 eV at 0.5 mol/l. The minimum value of Urbach energy of ZnO thin film was achieved with 0.5 mol/l. |
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