Thermodynamics of Nucleation of Silicon Carbide Nanocrystals during Carbonization of Porous Silicon

Автори Yu.S. Nagornov
Приналежність

Institute of Microstructure Technology, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany

Е-mail Nagornov.Yuri@gmail.com
Випуск Том 8, Рік 2016, Номер 3
Дати Одержано 14.04.2016, опубліковано online - 03.10.2016
Посилання Yu.S. Nagornov, J. Nano- Electron. Phys. 8 No 3, 03001 (2016)
DOI 10.21272/jnep.8(3).03001
PACS Number(s) 82.60.Nh, 81.07.Bc, 64.70.Nd
Ключові слова Thermodynamics of nucleation, SiC nanocrystals, High-temperature carbonization, Porous silicon (3) , Monte Carlo simulation (3) .
Анотація The formation of SiC nanocrystals of the cubic modification in the process of high-temperature carbonization of porous silicon has been analyzed. It has been shown that the surface energy of silicon nanoparticles and quantum filaments is released in the process of annealing and carbonization. The Monte Carlo simulation has shown that the released energy makes it possible to overcome the nucleation barrier and to form SiC nanocrystals.

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