Influence of the Composition on the Thermoelectric and Electro-physical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Application

Автори	P.I. Lazarenko¹, , A.A. Sherchenkov¹, S.A. Kozyukhin²^,³, D.Y. Terekhov¹, A.O. Yakubov¹, A.V. Babich¹, A.S. Shuliatyev¹, I.V. Sagunova¹, E.N. Redichev¹
Приналежність	¹ National Research University of Electronic Technology, 1, Shokin sq., 124498 Zelenograd, Moscow, Russia ² Kurnakov Institute of General and Inorganic Chemistry, RAS, 31, Leninsky prosp., 119991, Moscow, Russia ³ National Research Tomsk State University, 634050 Tomsk, Russia
Е-mail	aka.jum@gmail.com
Випуск	Том 8, Рік 2016, Номер 3
Дати	Одержано 04.05.2016, опубліковано online - 03.10.2016
Посилання	P.I. Lazarenko, A.A. Sherchenkov, et al., J. Nano- Electron. Phys. 8 No 3, 03033 (2016)
DOI	10.21272/jnep.8(3).03033
PACS Number(s)	73.61.Jc, 73.50.Lw
Ключові слова	Phase change memory (2) , Ge-Sb-Te, quasi-binary line GeTe-Sb2Te3, Seebeck coefficient, Electro-physical properties.
Анотація	Influence of the composition variation along the quasi-binary line GeTe-Sb2Te3 on the thermoelectric and electro-physical properties of thin films was investigated. GST amorphous thin films have high Seebeck coefficients, which drops nearly on the order of magnitude after the crystallization. Temperature dependences of the resistivities were studied, and it was determined that crystallization temperature increases with moving along the quasi-binary line GeTe-Sb2Te3 from GeSb4Te7 to GeSb2Te4, and then to Ge2Sb2Te5, while the phase transition temperature range decreases. Current-voltage characteristics of amorphous thin films have three voltage ranges with different dependencies due to the different mechanisms of charge carrier transport.
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